Machine learning and high-throughput computation-assisted precise synthesis of quantum dots for reliable neuromorphic computing

IF 7.4 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zhiqing Wang  (, ), Keqiang Chen  (, ), Qiao Wang  (, ), Jing Yang  (, ), Zhi Qin  (, ), Yang Hu  (, ), Jie Shen  (, ), Pengchao Zhang  (, ), Jing Zhou  (, ), Wen Chen  (, )
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引用次数: 0

Abstract

Quantum dot (QD)-based memristors enable precise and energy-efficient neuromorphic computing through atomic-level control over electrical synapse performance. However, the stochastic nature of QD structures results in the poor reliability of resistive switching in neuromorphic computing, limiting its practical applications. Here, we present a data-driven QD synthesis optimization loop to precisely engineer QD structures for reliable neuromorphic computing. By deeply integrating high-throughput density functional theory with machine learning, we establish a cross-scale screening platform for precise synthesis of QDs, enabling multi-dimension predictions from atomic-level structures to macroscopic electrical synaptic behaviors. Through the minimization of structural disorder, achieved by pure phase, uniform size distribution, and highly preferred orientation, QD-based memristors demonstrate a 57% reduction in switching voltage, a two-order-of-magnitude increase in the ON/OFF ratio, and endurance and retention degradation as low as 0.1% over 8.4 × 107 s of continuous operation and 105 rapid read cycles. Furthermore, the dynamic learning range and neuromorphic computing accuracy are improved by 477% and 27.8% (reaching 92.23%), respectively. These findings establish a scalable, data-driven strategy for rational design of QD-based memristors, advancing the development of next-generation reliable neuromorphic computing systems.

机器学习和高通量计算辅助量子点精确合成,用于可靠的神经形态计算
基于量子点(QD)的忆阻器通过对电突触性能的原子级控制实现精确和节能的神经形态计算。然而,量子点结构的随机性导致神经形态计算中电阻开关的可靠性较差,限制了其实际应用。在这里,我们提出了一个数据驱动的量子点合成优化回路,以精确地设计量子点结构,以实现可靠的神经形态计算。通过将高通量密度泛函理论与机器学习深度结合,我们建立了一个精确合成量子点的跨尺度筛选平台,实现了从原子水平结构到宏观电突触行为的多维预测。通过纯相位、均匀的尺寸分布和高度优选的取向,使结构混乱最小化,基于qd的忆阻器显示开关电压降低了57%,开/关比提高了两个数量级,在8.4 × 107 s的连续工作和105个快速读取周期内,耐用性和保持率下降低至0.1%。此外,动态学习范围和神经形态计算精度分别提高了477%和27.8%,达到92.23%。这些发现为合理设计基于量子点的忆阻器建立了一个可扩展的、数据驱动的策略,推动了下一代可靠的神经形态计算系统的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Science China Materials
Science China Materials Materials Science-General Materials Science
CiteScore
11.40
自引率
7.40%
发文量
949
期刊介绍: Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.
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