Sn doping induced interfacial barrier height tailoring in Ga2O3 deep-ultraviolet photodetector

IF 7.4 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2025-09-08 DOI:10.1007/s40843-025-3509-0

Lili Yang (, ), Shan Li (, ), Muzi Li (, ), Maolin Zhang (, ), Zeng Liu (, ), Zhang Zhang (, ), Weihua Tang (, )

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引用次数: 0

Abstract

The optimization of device performance through tunable elemental doping is one of the appealing aspects of semiconductors. Compared with heavy doping, light doping is more efficient and allows for the precise regulation of material properties and the tailoring of band structures. In this study, a facile plasma-enhanced chemical vapor deposition technology is employed to fabricate a series of Sn-doped Ga₂O₃ films (Sn:Ga=0–1.14 at.%). The conductivity of the films, along with the atypical Schottky-type junction behavior observed at the Ti/Sn-Ga₂O₃ interface, can be modulated by varying the concentrations of oxygen vacancy (O_II), and coordinately influence the carrier transport processes and the detection performance of the corresponding Au/Ti/Sn-Ga₂O₃/Ti/Au photodetectors. Notably, as the O_II concentration increases to 38.88%, the interfacial Schottky barrier height decreases to 0.54 eV, which facilitates electron tunneling and promotes a superior responsivity reaching 1880 mA/W. Conversely, a reduced O_II concentration of 30% reinforces the barrier height (0.70 eV), which in turn restricts the dark current (28.4 pA) while improving the detectivity to 1.44×10¹³ Jones and the photo-to-dark current ratio to 3.42×10⁴. This research highlights the importance of balancing doping concentration with performance optimization and illustrates the significant potential of interface engineering in regulating electronic transport behavior and device performance.

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锡掺杂诱导Ga2O3深紫外光电探测器界面势垒高度裁剪

通过可调元素掺杂来优化器件性能是半导体领域最吸引人的方面之一。与重掺杂相比，轻掺杂效率更高，可以精确调节材料性能和定制能带结构。本研究采用等离子体增强化学气相沉积技术制备了一系列Sn掺杂的Ga2O3薄膜（Sn:Ga= 0-1.14 at.%）。薄膜的电导率以及在Ti/Sn-Ga2O3界面上观察到的非典型肖特基结行为可以通过改变氧空位（OII）的浓度来调节，并协调影响载流子输运过程和相应的Au/Ti/Sn-Ga2O3/Ti/Au光电探测器的检测性能。值得注意的是，当OII浓度增加到38.88%时，界面肖特基势垒高度降低到0.54 eV，有利于电子隧穿，使得响应率达到1880 mA/W。相反，降低30%的OII浓度会增强势垒高度（0.70 eV），从而限制暗电流（28.4 pA），同时将探测率提高到1.44×1013 Jones，光暗电流比提高到3.42×104。这项研究强调了平衡掺杂浓度与性能优化的重要性，并说明了界面工程在调节电子输运行为和器件性能方面的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.