Chloride-passivated lead sulfide thin film for high-performance extended short wavelength infrared photodiode

IF 7.4 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2025-09-08 DOI:10.1007/s40843-025-3512-2

Shaoheng Xu (, ), Sen Li (, ), Wenyu Zhang (, ), Hao Luo (, ), Ruiming Li (, ), Qianqian Lin (, ), Haisheng Song (, ), Jiajun Luo (, ), Jiang Tang (, )

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引用次数: 0

Abstract

Liquid-phase chemically deposited lead sulfide as a narrow-bandgap semiconductor holds great potential for extended short-wavelength infrared sensing. However, lead sulfide thin films typically contain massive sulfur vacancies and oxygen impurities, which form during chemical deposition, leading to inferior device performance. Here, for the first time, we report on the in-situ passivation of lead sulfide polycrystalline film with chloride ions as an additive during liquid-phase chemical deposition. Due to the similar ionic radius of chloride ions to sulfur ions and their ability to coordinate with lead ions, the addition of chloride ions effectively reduces sulfur vacancy and oxygen-in-sulfur defect densities. The reduction of bulk defect densities lowered the dark current density of homojunction photodiodes made from the passivated film by more than threefold. The photodiode exhibited a high responsivity of 0.79 A/W at 2.5 µm and a fast response speed of 19.6 µs. At room temperature, the 1 mm² photodiodes exhibited a resistance-area product of 8.78 Ω cm² and a specific detectivity of 8.79 × 10⁹ Jones at 2.5 µm, among the best-reported performance of lead sulfide bulk thin film photodiode. At 80 K, the resistance-area product was 6.16 kΩ cm². This research paves a new path for high-performance extended short-wavelength infrared photodetector.

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高性能扩展短波长红外光电二极管用氯化钝化硫化铅薄膜

液相化学沉积的硫化铅作为一种窄带隙半导体，在扩展短波红外传感方面具有很大的潜力。然而，硫化铅薄膜通常含有大量的硫空位和氧杂质，这些杂质是在化学沉积过程中形成的，导致器件性能较差。本文首次报道了在液相化学沉积过程中，氯离子作为添加剂对硫化铅多晶薄膜进行原位钝化。由于氯离子的离子半径与硫离子相似，且能与铅离子配合，氯离子的加入能有效降低硫空位和硫中氧缺陷密度。体积缺陷密度的降低使钝化膜制成的同结光电二极管的暗电流密度降低了三倍以上。该光电二极管在2.5µm处具有0.79 a /W的高响应率和19.6µs的快速响应速度。在室温下，1 mm2光电二极管的电阻面积积为8.78 Ω cm2，在2.5µm处的比探测率为8.79 × 109 Jones，是目前报道的硫化铅体薄膜光电二极管中性能最好的。在80k时，电阻面积积为6.16 kΩ cm2。本研究为高性能扩展短波红外探测器的研制开辟了新的道路。

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来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.