Close Space Sublimation Growth of Sb2(S,Se)3 Thin-Film Solar Cells

IF 8.2 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

ACS Applied Materials & Interfaces Pub Date : 2025-10-08 DOI:10.1021/acsami.5c10627

Daniya A. Sindi, Thomas P. Shalvey, Matthew. J. Smiles, Tim. D. Veal, Leon Bowen, Jonathan. D. Major

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Abstract

This study reports the synthesis and characterization of Sb₂(S,Se)₃ thin films for thin-film photovoltaics via a single-source close space sublimation (CSS) approach. We demonstrate power conversion efficiencies of up to 4.3% with notable improvements in open-circuit voltage (V_oc >490 mV) compared to those of Sb₂Se₃ equivalents. Secondary ion mass spectrometry, X-ray diffraction, and cross-sectional scanning and transmission electron microscopies identified some issues in controlling film stoichiometry, particularly with sulfur loss, leading to oxide formation and elevated series resistance, reducing the fill factor in completed devices. We also identify clear discrepancies between the determined bandgap, sulfur content inferred from X-ray diffraction analysis, and sulfur content of the synthesized source material. We conclude that while CSS is a promising method for Sb₂(S,Se)₃ film fabrication, addressing sulfur loss during deposition is crucial to achieving further improvements in device efficiency.

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Sb2(S,Se)3薄膜太阳能电池的近空间升华生长

本研究报道了利用单源近空间升华（CSS）方法合成和表征用于薄膜光伏的Sb2(S,Se)3薄膜。我们证明了功率转换效率高达4.3%，与Sb2Se3等效产品相比，开路电压（Voc >490 mV）显著提高。二次离子质谱、x射线衍射、横断面扫描和透射电子显微镜发现了控制膜化学计量的一些问题，特别是硫损失，导致氧化物形成和串联电阻升高，降低了完成设备的填充系数。我们还确定了确定的带隙，从x射线衍射分析推断的硫含量和合成源材料的硫含量之间的明显差异。我们得出结论，虽然CSS是一种很有前途的Sb2(S,Se)3薄膜制备方法，但解决沉积过程中的硫损失对于进一步提高器件效率至关重要。

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来源期刊

ACS Applied Materials & Interfaces 工程技术-材料科学：综合

CiteScore

16.00

自引率

6.30%

发文量

4978

审稿时长

1.8 months

期刊介绍： ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.