Boosted charge carrier dynamics in WO3 photoanodes engineered through a one-step electrochemical post-treatment for efficient photoelectrochemical water splitting
Imane En-Naji , Zhiyuan Peng , Yilu Su , Amir Khojastehnezhad , Mohamed Siaj
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引用次数: 0
Abstract
Strengthening intrinsic charge transport via defect engineering is an effective strategy to optimize the photoelectrochemical (PEC) water splitting properties of tungsten oxide (WO3) photoanode. In this work, a modified and effective electrochemical post-treatment approach has been developed to introduce abundant oxygen vacancies into highly-ordered WO3 nanoplate arrays, yielding oxygen-deficient WO3-x photoanode. Electrochemical tests and energy band structural analyses reveal that the generated oxygen vacancies, acting as shallow donors, significantly increase the overall carrier density, electrical conductivity, and built-in electric field (band bending), thereby contributing to the promotion of both bulk charge separation and interfacial charge injection efficiency (up to ∼ 90 % at 1 VRHE). As a result, the optimized WO3-x-Re60 photoanode demonstrates a dramatically improved photoresponse, delivering a maximum photocurrent density of 1.1 mA/cm2 at 1.23 VRHE, representing a 440 % increment over the pristine WO3, and is simultaneously accompanied by a negatively shifted onset potential of 0.24 V and boosted photon-to-current conversion efficiency. Overall, this work elucidates the critical role of oxygen vacancies in governing charge-carrier dynamics in WO3 and demonstrates a practical defect-engineering strategy for designing efficient photoanodes toward solar-driven water oxidation.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.