Enhancing Physical Randomness in Ta2O5/HfO2 Based Memristors through Electrode Engineering for True Random Number Generation.

IF 16 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

ACS Nano Pub Date : 2025-10-09 DOI:10.1021/acsnano.5c05204

Bei Jiang,Yong Wang,Yahui Qing,Yongtao Shan,Ruxin Li,Zihan Wu,Zihao Chen,Liao Zhao,Desheng Cai,Peiliang Su,Xingqiang Liu,Kenli Li,Hao Huang,Xingan Jiang,Xiangdong Yang,Cong Ye,Xuming Zou

{"title":"Enhancing Physical Randomness in Ta2O5/HfO2 Based Memristors through Electrode Engineering for True Random Number Generation.","authors":"Bei Jiang,Yong Wang,Yahui Qing,Yongtao Shan,Ruxin Li,Zihan Wu,Zihao Chen,Liao Zhao,Desheng Cai,Peiliang Su,Xingqiang Liu,Kenli Li,Hao Huang,Xingan Jiang,Xiangdong Yang,Cong Ye,Xuming Zou","doi":"10.1021/acsnano.5c05204","DOIUrl":null,"url":null,"abstract":"True random number generators (TRNGs) based on memristors utilize inherent switching variability to generate unpredictable true random numbers. Herein, the performance and instability of Ta2O5/HfO2/Pt based memristors induced by their top electrodes are investigated. With Ag, Ta, and Pt as their top electrodes, Ta2O5/HfO2/Pt based memristors exhibit volatility, bipolarity, and unipolarity, respectively, which correspond to different conduction mechanism models. The intrinsic stochastic characteristics can be leveraged in various TRNG circuits, especially enhancing the throughput rate and continuity of circuits by utilizing unipolar Pt/Ta2O5/HfO2/Pt devices. Notably, under optimized conditions, the TRNG based on the unipolar device achieves a throughput rate of approximately 160 kb/s, and the generated true random numbers passed all 15 NIST SP 800-22 randomness tests. This work not only realizes a TRNG with a unipolar memristor as its core entropy source but also underscores the significance in securing encrypted transmission for Internet of Things applications.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"1 1","pages":""},"PeriodicalIF":16.0000,"publicationDate":"2025-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Nano","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsnano.5c05204","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

True random number generators (TRNGs) based on memristors utilize inherent switching variability to generate unpredictable true random numbers. Herein, the performance and instability of Ta2O5/HfO2/Pt based memristors induced by their top electrodes are investigated. With Ag, Ta, and Pt as their top electrodes, Ta2O5/HfO2/Pt based memristors exhibit volatility, bipolarity, and unipolarity, respectively, which correspond to different conduction mechanism models. The intrinsic stochastic characteristics can be leveraged in various TRNG circuits, especially enhancing the throughput rate and continuity of circuits by utilizing unipolar Pt/Ta2O5/HfO2/Pt devices. Notably, under optimized conditions, the TRNG based on the unipolar device achieves a throughput rate of approximately 160 kb/s, and the generated true random numbers passed all 15 NIST SP 800-22 randomness tests. This work not only realizes a TRNG with a unipolar memristor as its core entropy source but also underscores the significance in securing encrypted transmission for Internet of Things applications.

查看原文本刊更多论文

通过电极工程增强Ta2O5/HfO2基忆阻器的物理随机性，实现真随机数生成。

基于忆阻器的真随机数发生器（trng）利用固有的开关可变性产生不可预测的真随机数。本文研究了Ta2O5/HfO2/Pt基忆阻器的性能及其顶电极诱导的不稳定性。以Ag、Ta和Pt为顶电极，Ta2O5/HfO2/Pt基忆阻器分别表现为挥发性、双极性和单极性，对应不同的传导机制模型。利用单极Pt/Ta2O5/HfO2/Pt器件，可以提高电路的吞出率和连续性。值得注意的是，在优化条件下，基于单极器件的TRNG实现了约160 kb/s的吞吐量，生成的真随机数通过了全部15项NIST SP 800-22随机性测试。这项工作不仅实现了以单极忆阻器为核心熵源的TRNG，而且强调了在物联网应用中保护加密传输的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

ACS Nano 工程技术-材料科学：综合

CiteScore

26.00

自引率

4.10%

发文量

1627

审稿时长

1.7 months

期刊介绍： ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.