Anisotropy of Second-Harmonic Generation in SnSe Flakes with Ferroelectric Stacking

IF 3.9 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Li-Tien Huang, Redhwan Moqbel, Chi Chen, Ming-Hao Lee, Chi-Cheng Lee, Nannan Mao, Tianyi Zhang, Yunyue Zhu, Jing Kong, Kung-Hsuan Lin
{"title":"Anisotropy of Second-Harmonic Generation in SnSe Flakes with Ferroelectric Stacking","authors":"Li-Tien Huang,&nbsp;Redhwan Moqbel,&nbsp;Chi Chen,&nbsp;Ming-Hao Lee,&nbsp;Chi-Cheng Lee,&nbsp;Nannan Mao,&nbsp;Tianyi Zhang,&nbsp;Yunyue Zhu,&nbsp;Jing Kong,&nbsp;Kung-Hsuan Lin","doi":"10.1002/adpr.202500033","DOIUrl":null,"url":null,"abstract":"<p>The second-harmonic generation (SHG) susceptibilities of few-layer SnSe with ferroelectric stacking are investigated using both experimental and theoretical approaches. Theoretical calculations predict a maximum bulk SHG susceptibility of 2444 pm V<sup>−1</sup> at 1.2 eV, which is three orders of magnitude larger than that of typical nonlinear crystals. Experimentally, a maximum value of 1424 pm V<sup>−1</sup> at 1.19 eV in close agreement with the theoretical prediction is measured. The anisotropic SHG patterns observed experimentally align with theoretical predictions based on the material's point group symmetry. The photon-energy dependence of SHG patterns is also measured within the range of 1.19 to 1.55 eV to explore the relative strengths of various SHG susceptibilities. Notably, the measured <span></span><math>\n <semantics>\n <mrow>\n <msubsup>\n <mi>χ</mi>\n <mrow>\n <mi>y</mi>\n <mi>y</mi>\n <mi>y</mi>\n </mrow>\n <mrow>\n <mrow>\n <mo>(</mo>\n <mn>2</mn>\n <mo>)</mo>\n </mrow>\n </mrow>\n </msubsup>\n </mrow>\n <annotation>$\\chi_{y y y}^{\\left(\\right. 2 \\left.\\right)}$</annotation>\n </semantics></math> is significantly larger than the theoretical value of bulk AC-SnSe, likely due to the strain effects and the mixing of ferroelectric and antiferroelectric stacking configurations in the practical SnSe few-layer samples.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 10","pages":""},"PeriodicalIF":3.9000,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500033","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adpr.202500033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

The second-harmonic generation (SHG) susceptibilities of few-layer SnSe with ferroelectric stacking are investigated using both experimental and theoretical approaches. Theoretical calculations predict a maximum bulk SHG susceptibility of 2444 pm V−1 at 1.2 eV, which is three orders of magnitude larger than that of typical nonlinear crystals. Experimentally, a maximum value of 1424 pm V−1 at 1.19 eV in close agreement with the theoretical prediction is measured. The anisotropic SHG patterns observed experimentally align with theoretical predictions based on the material's point group symmetry. The photon-energy dependence of SHG patterns is also measured within the range of 1.19 to 1.55 eV to explore the relative strengths of various SHG susceptibilities. Notably, the measured χ y y y ( 2 ) $\chi_{y y y}^{\left(\right. 2 \left.\right)}$ is significantly larger than the theoretical value of bulk AC-SnSe, likely due to the strain effects and the mixing of ferroelectric and antiferroelectric stacking configurations in the practical SnSe few-layer samples.

Abstract Image

铁电层SnSe薄片中二次谐波产生的各向异性
采用实验和理论两种方法研究了具有铁电堆叠的少层SnSe的二次谐波产生(SHG)磁化率。理论计算预测,在1.2 eV下,该晶体的最大体SHG磁化率为2444 pm V−1,比典型的非线性晶体大3个数量级。实验结果表明,在1.19 eV下测得的最大值为1424 pm V−1,与理论预测非常吻合。实验观察到的各向异性SHG模式与基于材料点群对称性的理论预测一致。在1.19 ~ 1.55 eV范围内测量了SHG模式的光子能量依赖关系,以探索不同SHG磁化率的相对强度。值得注意的是,测得的χ y y y (2) $\chi_{y y y}^{\left(\right. 2 \left.\right)}$明显大于实体AC-SnSe的理论值,这可能是由于应变效应以及实际SnSe少层样品中铁电和反铁电堆叠构型的混合。
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