Optimizing the Power Factor of FeSi2 Alloy by Achieving Flower-Like Surface Morphology Using Post-Growth Annealing

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2025-09-05 DOI:10.1007/s11664-025-12312-9

M. Yasir Ali, Ausaf Ahmed, A. Ali, Azhar Mehmood, M. Sharafat Hussain, Chun-Ming Wang, K. Mahmood

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Abstract

In this work, we have successfully optimized the power factor value for an FeSi₂ alloy by achieving a flower-like surface morphology. The samples used in this study were prepared using a solid-state reaction method. Fe and Si powders were mixed in a weight ratio of 2:1, and pellets were formed using a high-pressure press. The pellets were annealed at different temperatures in the range of 500–1000°C for 1 h using an air muffle furnace. X-ray diffraction (XRD) data confirmed the tetragonal lattice structure of all samples, and it was further evident that the crystal structure degraded as the annealing temperature increased to 900°C and 1000°C. A very high Seebeck coefficient (470 µV/K) was achieved for the sample annealed at 1000°C due to the emergence of a flower-like surface morphology with high-temperature annealing, as verified by scanning electron microscopy (SEM) images. On the other hand, electrical conductivity data suggested a decreasing trend with annealing temperature, because oxide-based insulating phases developed at a high annealing temperature due to the involvement of oxygen during the annealing process. However, the decreasing trend in electrical conductivity is not as great as the increasing behaviour of the Seebeck coefficient. Therefore, an optimized power factor value (3.5 × 10⁻⁵ W/m·K²) was achieved at the optimal annealing temperature of 700°C.

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FeSi2合金生长后退火获得花状表面形貌的功率因数优化

在这项工作中，我们通过实现花状表面形貌成功地优化了FeSi2合金的功率因数值。本研究所用样品采用固相反应法制备。铁和硅粉以2:1的重量比混合，并使用高压压机形成球团。用空气马弗炉在500-1000℃的不同温度下退火1 h。x射线衍射（XRD）数据证实了所有样品的四方晶格结构，并且进一步表明，随着退火温度升高到900℃和1000℃，晶体结构退化。通过扫描电子显微镜（SEM）图像验证，在1000°C退火的样品由于出现花状表面形貌而获得了非常高的塞贝克系数（470 μ V/K）。另一方面，电导率随退火温度的升高呈下降趋势，这是由于在退火过程中氧的参与导致氧化基绝缘相在较高的退火温度下形成的。然而，电导率的下降趋势不如塞贝克系数的增加趋势大。因此，在700℃的最佳退火温度下，获得了最佳的功率因数值（3.5 × 10−5 W/m·K2）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.