Tm3+-Doped Ca2Ga2SiO7 Phosphor as Blue-Emitting Candidate for Tricolor w-LED Application

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Anand Parasar, Kusum Rawat, Amit Kumar Vishwakarma, Sunil Kumar, Sanjay Kumar, Kaushal Jha
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Abstract

In this work, a batch of Tm3+-doped Ca2Ga2SiO7 phosphors was successfully synthesized via the conventional solid-state reaction method and systematically investigated for structural and photoluminescence properties. X-ray diffraction results confirmed the formation of a single-phase tetrahedral structure of Ca2Ga2SiO7 with a P421m space group and no detectable impurity phase, indicating successful incorporation of Tm3+ ions into the host lattice. Under near-ultraviolet excitation of 355 nm, the phosphors exhibited intense blue emission centered at 455 nm. The emission peak is attributed to the 1D2 → 3F4 transition of Tm3+ ions. The concentration-dependent study revealed an optimal dopant level of 1.0 mol% of Tm3+, beyond which concentration quenching occurs. The chromaticity coordinates of the optimized phosphor fall in the ideal blue region of the CIE 1931 diagram, confirming its potential to emit white light when combined with red and green phosphors. Decay time analysis showed a reduction in lifetime with increasing dopant concentration, suggesting energy transfer between neighboring Tm3+ ions. The results demonstrate that Ca2Ga2SiO7:Tm3+ is a promising candidate for next-generation solid-state lighting applications.

Tm3+掺杂Ca2Ga2SiO7荧光粉作为三色w-LED的蓝色发光候选材料
本文采用传统的固相反应方法成功合成了一批掺杂Tm3+的Ca2Ga2SiO7荧光粉,并对其结构和光致发光性能进行了系统的研究。x射线衍射结果证实了Ca2Ga2SiO7形成了具有P421m空间基团的单相四面体结构,没有检测到杂质相,表明Tm3+离子成功进入了主体晶格。在355nm的近紫外激发下,荧光粉表现出以455nm为中心的强烈蓝色发射。发射峰是由Tm3+离子的1D2→3F4跃迁引起的。浓度依赖性研究表明,Tm3+的最佳掺杂水平为1.0 mol%,超过该浓度会发生猝灭。优化后的荧光粉的色度坐标落在CIE 1931图的理想蓝色区域,证实了它与红色和绿色荧光粉结合时发出白光的潜力。衰减时间分析表明,随着掺杂剂浓度的增加,寿命减少,表明邻近Tm3+离子之间存在能量转移。结果表明,Ca2Ga2SiO7:Tm3+是下一代固态照明应用的有前途的候选者。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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