Enhancing Energy Storage and Electrode Scalability in Au/PVDF Composite Films Through Al2O3 Interface Engineering

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2025-09-03 DOI:10.1007/s11664-025-12327-2

Peicong Yang, Xiucai Wang, Wenbo Zhu, Pan Wang, Baoyu Du, Huidong Wang, Jianwen Chen, Xinmei Yu, Min Chen, Shuwen Luo, Yu Huang, Shikuan Sun

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引用次数: 0

Abstract

Interfacial effects and surface defects play a significant role in determining the properties of dielectric films. In this study, Au/PVDF films were fabricated using polyvinylidene fluoride (PVDF) as the polymer matrix and gold (Au) nanoparticles as fillers. Additionally, Al₂O₃–Au/PVDF films (AO-Au/PVDF) were produced by depositing a layer of aluminum oxide (Al₂O₃) onto the film surfaces through magnetron sputtering. The interfacial interactions between the Al₂O₃ layer and the Au/PVDF film, along with the role of Al₂O₃ in mitigating surface defects, were investigated concerning dielectric properties, real-time breakdown morphology on electrode surfaces, breakdown strength, and energy storage density at electrode sizes of 1 mm, 2 mm, 4 mm, and 8 mm. Compared to Au/PVDF films, AO-Au/PVDF films demonstrated relatively fewer breakdown points on their electrode surfaces. The breakdown strength improved by 7.7%, 8.8%, 6.3%, and 8.2% for the respective electrode sizes; consequently, this enhancement resulted in an increase in energy storage density. The incorporation of an Al₂O₃ layer effectively reduced surface defects within the film while decreasing the occurrence of partial breakdown points. This improvement contributed to enhanced breakdown strength and energy storage density while facilitating compatibility with larger-sized electrodes.

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通过Al2O3界面工程增强Au/PVDF复合膜的储能和电极可扩展性

界面效应和表面缺陷是决定介质薄膜性能的重要因素。本研究以聚偏氟乙烯（PVDF）为聚合物基体，金（Au）纳米颗粒为填料制备了Au/PVDF薄膜。此外，通过磁控溅射在薄膜表面沉积一层氧化铝（Al2O3），制备了Al2O3 - au /PVDF薄膜（AO-Au/PVDF）。研究了Al2O3层与Au/PVDF膜之间的界面相互作用，以及Al2O3在减轻表面缺陷方面的作用，研究了电极尺寸为1mm、2mm、4mm和8mm时的介电性能、电极表面的实时击穿形态、击穿强度和储能密度。与Au/PVDF膜相比，AO-Au/PVDF膜的电极表面击穿点相对较少。电极尺寸不同，击穿强度分别提高7.7%、8.8%、6.3%和8.2%；因此，这种增强导致了能量存储密度的增加。Al2O3层的掺入有效地减少了薄膜内部的表面缺陷，同时减少了部分击穿点的发生。这种改进有助于提高击穿强度和能量存储密度，同时促进与更大尺寸电极的兼容性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.