Realization of High Figure of Merit in Fe/Ni co-Doped SnO2 Nanoparticles by the Engineering of Charge and Phonon Transport

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2025-09-03 DOI:10.1007/s11664-025-12290-y

M. Yasir Ali, Najaf Abbas Khan, A. Ali, M. Shujaat Hussain, K. Mahmood

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Abstract

This manuscript reports a high figure of merit (ZT) of 0.95 for tin dioxide (SnO₂) nanoparticles achieved through engineering of the electronic charge and phonon transport. Co-doping of Fe/Ni atoms is introduced to enhance the lattice scattering, while a post-growth annealing technique is used to enhance the charge transport to achieve the highest power factor value. Un-doped and Fe/Ni co-doped SnO₂ nanoparticles are synthesized via a hydrothermal method and subsequently annealed at different temperatures ranging from 600°C to 900°C in steps of 100°C. It is observed that the electrical conductivity and Seebeck coefficient exhibited a substantial increase from 112 to 150 S/cm and 98 to 132 µV/°C, respectively, as the annealing temperature increased to 900°C. This behavior is supposed to be linked with imparting the thermal energy to charge carriers that may enhance charge carrier transport. An appreciable decrease in the observed thermal conductivity is supposed to be associated with enhanced phonon scattering at the interface of excessively available secondary phase domains in the crystal structure of SnO₂. This enhancement in power factor (2.5 × 10⁻² W/m °C²) and substantial decrease in thermal conductivity (203.55W/m °C) resulted in a ZT value of 0.95. To the best of our knowledge, this reported value of ZT for Fe/Ni co-doped SnO₂ nanoparticles is the highest value reported in the literature to date.

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利用电荷和声子输运工程实现Fe/Ni共掺杂SnO2纳米粒子的高品质图

本文报道了通过电子电荷和声子输运工程获得的二氧化锡纳米粒子的高品质值（ZT）为0.95。引入Fe/Ni原子共掺杂来增强晶格散射，而采用生长后退火技术来增强电荷输运以达到最高的功率因数值。通过水热法合成了未掺杂和Fe/Ni共掺杂的SnO2纳米颗粒，随后在600°C至900°C的不同温度下进行了100°C的退火。观察到，当退火温度增加到900℃时，电导率和塞贝克系数分别从112 ~ 150 S/cm和98 ~ 132µV/°C显著增加。这种行为被认为与向载流子传递热能有关，这可能会增强载流子的输运。观察到的热导率的明显下降被认为与SnO2晶体结构中过度可用的二次相域界面声子散射增强有关。功率因数的提高（2.5 × 10−2 W/m°C2）和热导率的大幅降低（203.55W/m°C）导致ZT值为0.95。据我们所知，这一报道的Fe/Ni共掺杂SnO2纳米颗粒的ZT值是迄今为止文献中报道的最高值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.