Graphene Growth via Plasma-Enhanced Hybrid Physical–Chemical Vapor Deposition: A Catalyst-Free Approach

Abstract

Graphene, with its prominent electrical properties, holds promise as an ideal material for a diverse range of applications, from electronics to optics. Yet, the feasibility of large-area integration in graphene remains constrained by its reliance on metal-based synthesis methods. Integrating graphene onto dielectric substrates is vital for microelectronic device fabrication. Hence, the catalyst-free fabrication of graphene emerges as a crucial pursuit for the future of microelectronic devices, aligning with the demands of integrated electronic technology. Here, we propose a plasma-enhanced hybrid physical–chemical vapor deposition (PE-HPCVD) method as a novel technique for the catalyst-free synthesis of graphene. Although the work is at its initial stages, it provides promising results of achieving large-area graphene sheets directly on silicon or SiO₂/Si substrates with desired thicknesses. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and Raman spectroscopy have been exploited to investigate the layer formation and their state of crystallization. In addition, we have realized field-effect transistors on graphene sheets with a promising electrical response.