{"title":"A 6.6-nA, 3.6-nW CMOS Current Reference With 0.4-V Supply Voltage","authors":"Azad Mahmoudi","doi":"10.1002/cta.4487","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>This paper presents an all-MOSFET nanoampere (nA) current reference with a wide operating temperature range able to operate at a supply voltage as low as 0.4 V for ultra-low power applications. The temperature-compensated current is generated by combining two currents with opposite temperature coefficients (TCs), which are derived from two NMOS transistors biased with different complementary-to-absolute-temperature (CTAT) gate voltages. Self-biased self-cascode MOSFET (SBSCM) stages operating in the subthreshold region are utilized as the slope-adjustable linear CTAT voltage generators to achieve both low-power and low-voltage operation. Designed in a 130-nm CMOS process with an active area of 0.0021 mm<sup>2</sup>, the proposed current reference achieves an average untrimmed TC of 308 ppm/°C over −40°C to 120°C while generating an output reference current of 6.6 nA. Post simulation results show that the power consumption is only 3.68 nW at the minimum supply voltage at room temperature.</p>\n </div>","PeriodicalId":13874,"journal":{"name":"International Journal of Circuit Theory and Applications","volume":"53 10","pages":"5691-5700"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Circuit Theory and Applications","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/cta.4487","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents an all-MOSFET nanoampere (nA) current reference with a wide operating temperature range able to operate at a supply voltage as low as 0.4 V for ultra-low power applications. The temperature-compensated current is generated by combining two currents with opposite temperature coefficients (TCs), which are derived from two NMOS transistors biased with different complementary-to-absolute-temperature (CTAT) gate voltages. Self-biased self-cascode MOSFET (SBSCM) stages operating in the subthreshold region are utilized as the slope-adjustable linear CTAT voltage generators to achieve both low-power and low-voltage operation. Designed in a 130-nm CMOS process with an active area of 0.0021 mm2, the proposed current reference achieves an average untrimmed TC of 308 ppm/°C over −40°C to 120°C while generating an output reference current of 6.6 nA. Post simulation results show that the power consumption is only 3.68 nW at the minimum supply voltage at room temperature.
期刊介绍：
The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.
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