{"title":"Design of a low-permittivity silicate garnet Ca3Ni2SiV2O12 with reduced sintering temperature","authors":"Yang li, Xueling Hu, Yanjun Liu, Zejun Jiang","doi":"10.1016/j.matlet.2025.139594","DOIUrl":null,"url":null,"abstract":"<div><div>A novel garnet composition, Ca<sub>3</sub>Ni<sub>2</sub>SiV<sub>2</sub>O<sub>12</sub>, was designed by incorporating both Si and V into the tetrahedral sites. The ceramics were synthesized via the conventional solid-state reaction method and sintered between 1080 and 1160 °C. X-ray diffraction and Rietveld refinement confirmed the formation of a pure cubic garnet phase (space group <em>Ia-3d</em>) across all temperatures. Microstructural analysis revealed that densification and grain growth improved with increasing sintering temperature. Optimal microwave dielectric properties were achieved at 1140 °C: a dielectric constant (<em>ε</em>ᵣ) of 8.2, a <em>Q</em> × <em>f</em> value of 21,960 GHz, and a temperature coefficient of resonant frequency (τ<sub><em>f</em></sub>) of approximately −45 ppm/°C. These results demonstrate that the strategic co-substitution of Si and V effectively lowers the sintering temperature while maintaining commendable dielectric performance, making Ca<sub>3</sub>Ni<sub>2</sub>SiV<sub>2</sub>O<sub>12</sub> a potential material for low-permittivity applications.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139594"},"PeriodicalIF":2.7000,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167577X25016246","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
A novel garnet composition, Ca3Ni2SiV2O12, was designed by incorporating both Si and V into the tetrahedral sites. The ceramics were synthesized via the conventional solid-state reaction method and sintered between 1080 and 1160 °C. X-ray diffraction and Rietveld refinement confirmed the formation of a pure cubic garnet phase (space group Ia-3d) across all temperatures. Microstructural analysis revealed that densification and grain growth improved with increasing sintering temperature. Optimal microwave dielectric properties were achieved at 1140 °C: a dielectric constant (εᵣ) of 8.2, a Q × f value of 21,960 GHz, and a temperature coefficient of resonant frequency (τf) of approximately −45 ppm/°C. These results demonstrate that the strategic co-substitution of Si and V effectively lowers the sintering temperature while maintaining commendable dielectric performance, making Ca3Ni2SiV2O12 a potential material for low-permittivity applications.
期刊介绍:
Materials Letters has an open access mirror journal Materials Letters: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
Materials Letters is dedicated to publishing novel, cutting edge reports of broad interest to the materials community. The journal provides a forum for materials scientists and engineers, physicists, and chemists to rapidly communicate on the most important topics in the field of materials.
Contributions include, but are not limited to, a variety of topics such as:
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• Synthesis - Quenching, solid state, solidification, solution synthesis, vapor deposition, high pressure, explosive