{"title":"Temperature and Dielectric Constant Dependent Input and Output Characteristics of CNTFET","authors":"Md Faysal Nayan, Sheikh Redwana Hossain, Sabia Sultana, Anika Rahman, Safayat-Al Imam","doi":"10.1049/mna2.70010","DOIUrl":null,"url":null,"abstract":"<p>Carbon nanotubes exhibit exceptional properties such as high carrier mobility, near-ballistic transport, and nanoscale dimensions, making them promising candidates for next-generation nanoelectronic devices. Understanding the dependency of temperature and dielectric is essential for optimizing the performance of carbon nanotube field effect transistors (CNTFETs). In this study, a numerical simulation model of semiconducting CNTFETs is presented to determine the electrical properties in the ballistic regime. This paper focuses on the impact of temperature and dielectric constant to evaluate the input–output characteristic of CNTFET devices. Moreover, the study investigated the changes in threshold voltage as a function of gate dielectric constant and temperature in the nanometer regime. The findings emphasize the importance of integrating temperature and dielectric constant relationships in the design and optimization of CNTFETs, allowing for their effective incorporation into future electronic applications.</p>","PeriodicalId":18398,"journal":{"name":"Micro & Nano Letters","volume":"20 1","pages":""},"PeriodicalIF":2.4000,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/mna2.70010","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro & Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/mna2.70010","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Carbon nanotubes exhibit exceptional properties such as high carrier mobility, near-ballistic transport, and nanoscale dimensions, making them promising candidates for next-generation nanoelectronic devices. Understanding the dependency of temperature and dielectric is essential for optimizing the performance of carbon nanotube field effect transistors (CNTFETs). In this study, a numerical simulation model of semiconducting CNTFETs is presented to determine the electrical properties in the ballistic regime. This paper focuses on the impact of temperature and dielectric constant to evaluate the input–output characteristic of CNTFET devices. Moreover, the study investigated the changes in threshold voltage as a function of gate dielectric constant and temperature in the nanometer regime. The findings emphasize the importance of integrating temperature and dielectric constant relationships in the design and optimization of CNTFETs, allowing for their effective incorporation into future electronic applications.
期刊介绍:
Micro & Nano Letters offers express online publication of short research papers containing the latest advances in miniature and ultraminiature structures and systems. With an average of six weeks to decision, and publication online in advance of each issue, Micro & Nano Letters offers a rapid route for the international dissemination of high quality research findings from both the micro and nano communities.
Scope
Micro & Nano Letters offers express online publication of short research papers containing the latest advances in micro and nano-scale science, engineering and technology, with at least one dimension ranging from micrometers to nanometers. Micro & Nano Letters offers readers high-quality original research from both the micro and nano communities, and the materials and devices communities.
Bridging this gap between materials science and micro and nano-scale devices, Micro & Nano Letters addresses issues in the disciplines of engineering, physical, chemical, and biological science. It places particular emphasis on cross-disciplinary activities and applications.
Typical topics include:
Micro and nanostructures for the device communities
MEMS and NEMS
Modelling, simulation and realisation of micro and nanoscale structures, devices and systems, with comparisons to experimental data
Synthesis and processing
Micro and nano-photonics
Molecular machines, circuits and self-assembly
Organic and inorganic micro and nanostructures
Micro and nano-fluidics