Xiaojun Yin , Li Zhou , Mingqi Yang , Xin Wang , Jinhua Su , Kaifeng Pan , Liang Tian , Xun Kang , Shusheng Pan
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引用次数: 0
Abstract
The p-type nitrogen-doped tin oxide (SnO2:N) films were fabricated on n-Si wafers through a combined sputtering and thermal oxidation process. The optimized p-type SnO2 films manifests a hole concentration of 6.27 × 1015 cm−3 and a mobility of 6.92 cm2/Vs. The p-SnO2:N/n-Si photodetector achieves broadband response from ultraviolet to near-infrared light (255–1040 nm), with a responsivity of 1.17 A/W and detectivity of 3.3 × 1010 Jones at 740 nm (at 91.6 μW/cm2) under 5 V bias. The linear dynamic range reaches 56.27 dB. The high mobility of p-SnO2:N films enable rapid separation of photogenerated carriers, yielding exceptional response speeds (13.84 μs rise/28.51 μs day). Remarkably, the devices maintain outstanding stability through 104 operational cycles (>5 h). Single-pixel imaging across UV–Vis–NIR spectra has been successfully demonstrated.
期刊介绍:
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.