Recent advances of 2D materials in semiconductor application: A review

Md. Aminul Islam , Safiullah Khan , Juhi Jannat Mim , S M Maksudur Rahman , Md. Ahadul Islam Patwary , Md. Safiul Islam , Nayem Hossain
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Abstract

Semiconductors have performed remarkably since the advent of two-dimensional (2D) materials with excellent electrical, optical, and thermal characteristics. This review summarizes the recent progress made in the 2D materials field, i.e., graphene, transition metal dichalcogenides (TMDCs), and black phosphorus, focusing on their distinct thickness-dependent band structures, charge carrier mobilities, and mechanical properties. This has become a short but powerful interface for mobile devices with fast variations in our speaking circuits, and the power reaches from transistors, photodetectors, and solar cells together with digital electronics, radio-frequency devices, optoelectronics, and sensing technologies. This paper seeks to provide a clear perspective on fabrication, stability, and scale-up challenges by discussing theoretical and experimental approaches and highlighting challenges and innovative methods, including ultrasound-assisted strategies and heterostructure engineering. The present article performed and analysed a systematic literature review on key publications on the fundamental mechanisms and emerging applications of 2D materials in semiconductor technology. The review highlights the role these materials play in improving device performance, energy efficiency, and environmental friendliness. The paper concludes with a perspective on future directions, highlighting new research opportunities through advanced doping techniques and defect engineering to address current limitations and propel the broader adoption of 2D materials. This work sets another milestone for next-generation semiconductors. Another unique aspect of the study is its ability to bridge the gap between the fundamental characteristics of 2D semiconductors and real device-level integration. It draws attention to scalability, stability, and complementary metal oxide semiconductors (CMOS) compatibility difficulties that were not adequately considered in previous studies. The study discusses sophisticated tactics, including interface optimization and heterostructure engineering. A comparative analysis of 2D materials and their possible real-world semiconductor applications is also included in this chapter.
二维材料在半导体中的应用进展
自二维(2D)材料问世以来,半导体表现显著,具有优异的电学、光学和热特性。本文综述了二维材料领域的最新进展,即石墨烯、过渡金属二硫族化合物(TMDCs)和黑磷,重点介绍了它们不同的厚度依赖性带结构、载流子迁移率和力学性能。这已经成为一个简短但功能强大的接口,用于移动设备,在我们的说话电路中有快速变化,功率来自晶体管、光电探测器、太阳能电池以及数字电子、射频设备、光电子和传感技术。本文旨在通过讨论理论和实验方法,突出挑战和创新方法,包括超声辅助策略和异质结构工程,为制造,稳定性和规模挑战提供清晰的视角。本文对半导体技术中二维材料的基本机制和新兴应用的关键出版物进行了系统的文献综述。这篇综述强调了这些材料在提高器件性能、能源效率和环境友好性方面的作用。论文最后展望了未来的发展方向,强调了通过先进的掺杂技术和缺陷工程来解决当前的局限性并推动二维材料的广泛应用的新研究机会。这项工作为下一代半导体树立了另一个里程碑。该研究的另一个独特方面是它能够弥合2D半导体的基本特征与实际设备级集成之间的差距。它引起了人们对可扩展性、稳定性和互补金属氧化物半导体(CMOS)兼容性问题的关注,这些问题在以前的研究中没有得到充分的考虑。研究讨论了复杂的策略,包括界面优化和异质结构工程。本章还包括对二维材料及其可能的实际半导体应用的比较分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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