Power Gated-SRAM and novel header–footer multiplexer based ultra low power Look-Up Table design

IF 2.5 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Meeniga Srikanth Reddy , Debanjali Nath , Debajit Deb
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引用次数: 0

Abstract

In this paper we propose a two-level power gating technique which could incorporate significant leakage power reduction in pass transistor (PTL) and transmission gate (T-Gate) based look up table (LUT), designed using 45 nm generic library from cadence. First level power gating at SRAM array resulted in reduced subthreshold and gate leakage across the devices. A novel Header/Footer logic has been implemented to power-gate MUX logic of LUT. Unlike conventional header/footer schemes that only cut off the supply or ground to reduce leakage, our diode-connected header and feedback-controlled footer enable parallel output level restoration while simultaneously suppressing leakage. The feedback-controlled footer (NFD) ensures that weak logic levels from the multiplexer do not propagate to the output buffer, thereby reducing subthreshold and gate leakage. The Power-gated SRAM average power dissipation has been observed to reduce from 6.09 pW to 1.884 pW (write-1 operation). Power gating in the SRAM array resulted in a three order magnitude reduction in average power from 17.01μ W to 153.05 nW at pass transistor-based LUT level. Similar average power reduction up to 3-orders have also been observed for T-Gate based MUX-LUT with power gated SRAMs from 16.42μ W to 688.3 nW. The values were further reduced by more than three orders for both PTL and T-Gate based designs when novel header/footer logic was applied at the MUX level. Post-layout simulations further validate that parasitic effects reduce overall power dissipation compared to the pre-layout results for conventional and gated SRAM based LUTs. Additionally, the CLB implementation demonstrates ultra-low power of 389.8 pW in low-performance mode (HP=0), highlighting the practical advantage of the proposed architecture over conventional LUT-based designs. The implementation of proposed design impose no observable delay of data transfer between input of SRAM to final output of CLB.
功率门控sram和基于超低功耗查找表的新型头脚多路复用器设计
在本文中,我们提出了一种两级功率门控技术,该技术可以显著降低通管(PTL)和基于传输门(T-Gate)的查找表(LUT)的泄漏功率,该技术使用cadence的45 nm通用库设计。SRAM阵列的一级功率门控降低了器件的亚阈值和栅极泄漏。在LUT的电源门MUX逻辑中实现了一种新颖的Header/Footer逻辑。与传统的仅切断电源或接地以减少泄漏的表头/脚方案不同,我们的二极管连接表头和反馈控制的脚能够在抑制泄漏的同时实现并联输出电平恢复。反馈控制脚(NFD)确保来自多路复用器的弱逻辑电平不会传播到输出缓冲区,从而减少亚阈值和门漏。功率门控SRAM的平均功耗从6.09 pW降低到1.884 pW (write-1操作)。SRAM阵列中的功率门控使得基于通通晶体管的LUT水平的平均功率从17.01μ W降低到153.05 nW,降低了3个数量级。基于T-Gate的MUX-LUT的功率门控sram的平均功耗从16.42μ W降至688.3 nW,平均功耗降低了3个数量级。当在MUX级别应用新颖的页眉/页脚逻辑时,PTL和基于t门的设计的值进一步降低了三个数量级以上。布局后的仿真进一步验证了与传统和门控SRAM的布局前结果相比,寄生效应降低了整体功耗。此外,CLB实现在低性能模式下展示了389.8 pW的超低功耗(HP=0),突出了所提出的架构相对于传统基于lut的设计的实际优势。所提出设计的实现在SRAM的输入到CLB的最终输出之间没有可观察到的数据传输延迟。
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来源期刊
Integration-The Vlsi Journal
Integration-The Vlsi Journal 工程技术-工程:电子与电气
CiteScore
3.80
自引率
5.30%
发文量
107
审稿时长
6 months
期刊介绍: Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics: Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.
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