Direct vapor transport growth of antimony trisulfide crystals for photodetector and photocatalytic applications

Abstract

The direct vapor transport (DVT) method synthesizes Antimony Trisulfide (Sb₂S₃), a material with remarkable structural, optical, and electrical properties. This work thoroughly analyzes the structural and functional characteristics of the Sb₂S₃ crystals. Scanning electron microscopy and energy-dispersive X-ray spectroscopy confirm a defect-free surface, absence of grain boundary irregularities, and uniform composition with high phase purity. Structural stability and phase purity are verified through X-ray diffraction and Raman spectroscopy, confirming its orthorhombic crystal structure and the presence of Sb–S bond vibrations. The optical direct bandgap of Sb₂S₃ measures 1.75 eV. Electrical measurements confirm the semiconducting behavior with efficient charge transport and the activation energy of 0.94 eV. Thermogravimetric analysis provides detailed insights into its thermal stability by examining its weight loss behavior under controlled heating conditions. The study successfully determined the photodetector's performance parameters of the Sb₂S₃ crystal and the Sb₂S₃/(Sn_0.05Sb_0.15)₂(Te_0.02Se_0.18)₃ heterojunction.