MEMS-based PANI@UiO-66 sensor for NH3 detection with rapid response and low limit

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-09-23 DOI:10.1016/j.sna.2025.117092

Mingxia Feng , Jintian Qian , Dawu Lv , Hao Liu , Qiuju Zhang , Weijie Song , Wenfeng Shen , Ruiqin Tan

引用次数: 0

Abstract

An innovative ammonia (NH₃) gas sensor on a micro-hotplate MEMS substrate working at room temperature was developed, leveraging in-situ polymerization of　polyaniline (PANI) to integrate with a metal-organic framework (MOF) UiO-66. The PANI@UiO-66 sensor demonstrated remarkable gas sensing performance of 183.3 % response for 1 ppm NH₃ with rapid response and recovery times (17 s / 110 s) and low theoretical limit (LOD) reaching 0.634 ppb. Notably, the sensor exhibited exceptional selectivity and long-term stability. The excellent gas-sensing performance is primarily attributed to the porous structure of UiO-66, which increases the number of active sites and enhances the protonation of polyaniline. The results indicate that the PANI@UiO-66 sensor is a high-performance candidate for portable and lightweight applications in NH₃ related disease monitoring.

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基于mems的PANI@UiO-66传感器用于NH3检测，具有快速响应和低极限

利用聚苯胺（PANI）原位聚合与金属有机框架（MOF） uuo -66集成，在室温下工作的微热板MEMS衬底上开发了一种创新的氨（NH3）气体传感器。PANI@UiO-66传感器对1 ppm NH3的响应率为183.3 %，响应速度快，恢复时间短（17 s / 110 s），理论限低（LOD）可达0.634 ppb。值得注意的是，该传感器表现出优异的选择性和长期稳定性。UiO-66具有优异的气敏性能，主要归功于其多孔结构增加了活性位点的数量，增强了聚苯胺的质子化作用。结果表明，PANI@UiO-66传感器是一种高性能、轻便的NH3相关疾病监测应用的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...