Ultrasensitive label-free electrochemical aptasensor based on Ag nanoparticles and polyaniline-modified ITO electrode for early detection of microRNA-155 in breast cancer

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-09-27 DOI:10.1016/j.sna.2025.117110

Mohammad Mahdi Alemnezhad , Ali Ghaffarinejad , Hamid Shahbazmohammadi

引用次数: 0

Abstract

In this work, we report a novel electrochemical aptasensor based on indium tin oxide (ITO) modified with silver nanoparticles (AgNPs) and polyaniline (PANI) for the ultrasensitive detection of microRNA-155 (miR-155), an important biomarker of breast cancer. The synergistic properties of AgNPs and PANI significantly enhanced the electrode’s conductivity and surface area, enabling highly sensitive detection. The aptasensor exhibited a wide linear response range from 1 zM to 1 fM, with a remarkably low detection limit of 1 zM. Application in spiked plasma samples yielded recovery values between 94.5 % and 118.8 %, confirming the robustness and reliability of the platform. These results highlight the strong potential of the proposed aptasensor for early breast cancer diagnostics and demonstrate its promise for future clinical applications.

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基于银纳米粒子和聚苯胺修饰ITO电极的超灵敏无标记电化学传感器早期检测乳腺癌中的microRNA-155

在这项工作中，我们报道了一种基于纳米银（AgNPs）和聚苯胺（PANI）修饰的氧化铟锡（ITO）的新型电化学感应传感器，用于超灵敏检测乳腺癌重要生物标志物microRNA-155 （miR-155）。AgNPs和PANI的协同特性显著提高了电极的电导率和表面积，实现了高灵敏度的检测。该传感器线性响应范围从1 zM到1 fM，检测限极低，仅为1 zM。应用于加标血浆样品，回收率在94.5 % ~ 118.8 %之间，证实了该平台的稳健性和可靠性。这些结果突出了所提出的适配体传感器在早期乳腺癌诊断中的巨大潜力，并展示了其未来临床应用的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...