Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba
{"title":"Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg","authors":"Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba","doi":"10.1016/j.pedc.2025.100120","DOIUrl":null,"url":null,"abstract":"<div><div>An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"12 ","pages":"Article 100120"},"PeriodicalIF":0.0000,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Power electronic devices and components","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772370425000458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.
Power electronic devices and componentsHardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality