Systematic investigation on the effects of tracks’ mutual coupling on a GaN-based three-level bridge leg

Maria Giorgia Spitaleri , Francesco Iannuzzo , Emre Gurpinar , Giacomo Scelba
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Abstract

An investigation of the mutual coupling among key switching paths in a three-level bridge leg based on GaN switches is presented in this paper. The used methodology relied on Ansys extensive numerical simulations based on the real printed circuit board (PCB) geometry. Results showed that the self-inductance is not enough to evaluate the switching behavior during some critical switching patterns. Further investigations highlighted that mutual coupling between power and gate-return paths plays a key role. The effect on the switching energy is shown to be up to 13 % in the worst-case scenario, i.e. at 400 V voltage and 7.5 A current.

Abstract Image

轨道互耦对氮化镓三水平桥腿影响的系统研究
本文研究了基于GaN开关的三电平桥腿中关键开关路径间的互耦问题。所使用的方法依赖于Ansys基于实际印刷电路板(PCB)几何形状的广泛数值模拟。结果表明,在某些关键的开关模式中,自感不足以评估开关行为。进一步的研究表明,功率和门返回路径之间的相互耦合起着关键作用。在最坏的情况下,即在400 V电压和7.5 A电流下,对开关能量的影响高达13%。
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来源期刊
Power electronic devices and components
Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality
CiteScore
2.00
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