Electronic structure of 1,4-Phenylenediacrylic acid on graphene and bilayer graphite: from experiments to DFT and ab initio molecular dynamics simulations

IF 4.3 Q2 CHEMISTRY, PHYSICAL
Elaheh Mohebbi , Eleonora Pavoni , Pierluigi Stipa , Marina Petroselli , Cristina Minnelli , Luca Pierantoni , Davide Mencarelli , Martino Aldrigo , Emiliano Laudadio , Mir Masoud Seyyed Fakhrabadi
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Abstract

In this work, density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) simulations were implemented to expand the knowledge about the interaction of graphene and bilayer graphite surface with 1,4-Phenylenediacrylic acid (C12H10O4). The DFT calculations demonstrated that C12H10O4 molecule has an opening band gap of 0.0062 eV at the top position over the graphene sheet higher than the cross and bridge sites with lower band gaps of 0.0050 eV and 0.0046 eV, respectively. The HOMO-LUMO splitting calculations confirmed more mixture of LUMO states of the C12H10O4 and graphene in the carbon-carbon double bond in vinyl segment and the COOH functional group in the C12H10O4@Graphene (top) adsorption site. Then, the increasing of the molecule units on the graphene substrate resulted in a higher electronic band gap of 0.0068 eV and LUMO energy level of 0.9528 than 0.9383 eV for the monomer ones. The AIMD calculations were used to mimic the self-assembly process of the C12H10O4 molecules on the graphene layer at room temperature, remarking high adsorption capabilities of the latter one. The imaginary and real parts of dielectric constant have been evaluated and for all cases the maximum intensity of the main first peak has been found at 2.43 THz. The results of the static part of dielectric constant showed high Re(ω) for the adsorption of C12H10O4 monomers on the graphene surface, while by increasing the number of C12H10O4 units Re(ω) resulted remarkably reduced. The maximum value predicted is 7817 in C12H10O4@Graphene (cross) along the in-plane xx polarization and 2747 for 4C12H10O4@Graphene along the in-plane yy directions. Finally, the adsorption of C12H10O4 layer on the AB stacking bilayer graphite has been considered to simulate the experimental scanning tunnelling microscopy (STM) image of self-assembled C12H10O4 on highly oriented pyrolytic graphite (HOPG) surface. The zero-band gap has been predicted since the electronic structure of graphene near the K point varies by increasing its thickness.

Abstract Image

1,4-苯二丙烯酸在石墨烯和双层石墨上的电子结构:从实验到DFT和从头算分子动力学模拟
本研究通过密度泛函理论(DFT)计算和从头算分子动力学(AIMD)模拟来扩展石墨烯和双层石墨表面与1,4-苯二丙烯酸(C12H10O4)相互作用的知识。DFT计算结果表明,C12H10O4分子在石墨烯片上的顶部位置具有0.0062 eV的开放带隙,其带隙较低,分别为0.0050 eV和0.0046 eV。HOMO-LUMO分裂计算证实了C12H10O4和石墨烯在乙烯段碳碳双键和C12H10O4@Graphene(上)吸附位点COOH官能团中LUMO态的混合。随着石墨烯基板上分子单元的增加,其电子带隙为0.0068 eV, LUMO能级为0.9528 eV,高于单体的0.9383 eV。利用AIMD计算模拟了室温下C12H10O4分子在石墨烯层上的自组装过程,发现后者具有较高的吸附能力。对介电常数的虚部和实部进行了计算,在所有情况下,主第一峰的最大强度都在2.43太赫兹处。介电常数静态部分的结果表明,C12H10O4单体在石墨烯表面的吸附具有较高的Re(ω),而增加C12H10O4单元数后,Re(ω)显著降低。沿面内xx偏振方向C12H10O4@Graphene(交叉)的预测最大值为7817,沿面内yy方向4C12H10O4@Graphene的预测最大值为2747。最后,考虑了C12H10O4层在AB层石墨上的吸附,模拟了自组装C12H10O4在高取向热解石墨(HOPG)表面的实验扫描隧道显微镜(STM)图像。由于石墨烯在K点附近的电子结构随其厚度的增加而变化,因此预测了零带隙。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chemical Physics Impact
Chemical Physics Impact Materials Science-Materials Science (miscellaneous)
CiteScore
2.60
自引率
0.00%
发文量
65
审稿时长
46 days
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