Adapting of the linear/nonlinear optical and dielectric features of PVA/CMC/x wt% ZnAl2O4/ZnO blended polymers for optoelectronic and capacitive energy storage uses

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. M. El-naggar, A. M. Kamal, A. A. Albassam
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引用次数: 0

Abstract

In current work, blended polymer films have been prepared from ZnAl2O4/ZnO nanocomposite loaded polyvinyl alcohol (PVA)/carboxymethyl cellulose (CMC) blended polymer to exploit the uses of the formed materials in diverse optoelectronic and capacitive energy storage uses. The structure crystallite size and morphology of the filler sample were explored. The influence of filler amount on the crystallinity of the host PVA/CMC blended polymer was detected. The optical absorbance improvement or decline was contingent upon the wavelength range and/or the quantity of filler. The sample doped with 8 wt% ZnAl2O4/ZnO nanocomposite has the greatest absorbance in the visible region. The direct and indirect optical band gap energy values increased as the ZnAl2O4/ZnO nanocomposite concentration reached 2 wt% and they subsequently decreased as the amount of ZnAl2O4/ZnO nanocomposite in the polymer matrix grew. Doping the host blend with 8 wt% ZnAl2O4/ZnO nanocomposite only enhanced its refractive index (1.72). The k values of the loaded composite polymers were either greater than or less than that of the undoped sample, relying on the dopant level and/or the wavelength range. The influence of doping amount and the wavelength range on the linear/nonlinear optical parameters were examined. The dielectric constant (16 at 1 kHz) and AC conductivity attained their uppermost value at 2 wt% filler content, subsequently declining with more doping. The sample with 2 wt% ZnAl2O4/ZnO nanocomposite has a greater capacitive nature. The insertion of ZnAl2O4/ZnO nanocomposite filler into the PVA/CMC polymer affected the Nyquist plot.

适应PVA/CMC/x wt% ZnAl2O4/ZnO混合聚合物的线性/非线性光学和介电特性用于光电和电容储能
在目前的工作中,以ZnAl2O4/ZnO纳米复合材料负载聚乙烯醇(PVA)/羧甲基纤维素(CMC)共混聚合物制备了共混聚合物薄膜,以开发所形成的材料在各种光电和电容储能领域的应用。对填料样品的结构、晶粒尺寸和形貌进行了研究。考察了填料用量对宿主PVA/CMC共混聚合物结晶度的影响。光学吸光度的提高或下降取决于波长范围和/或填料的数量。掺8wt % ZnAl2O4/ZnO纳米复合材料的样品在可见光区吸光度最大。当ZnAl2O4/ZnO纳米复合材料浓度达到2 wt%时,直接光学带隙能量值和间接光学带隙能量值增加,随后随着ZnAl2O4/ZnO纳米复合材料在聚合物基体中的含量增加而降低。掺入8wt %的ZnAl2O4/ZnO纳米复合材料仅增强了其折射率(1.72)。负载复合聚合物的k值大于或小于未掺杂样品的k值,取决于掺杂水平和/或波长范围。考察了掺杂量和波长范围对线性/非线性光学参数的影响。介电常数(1 kHz时为16)和交流电导率在填料含量为2 wt%时达到最大值,随后随着掺杂量的增加而下降。含有2 wt% ZnAl2O4/ZnO纳米复合材料的样品具有更大的电容性。ZnAl2O4/ZnO纳米复合填料在PVA/CMC聚合物中的插入影响了Nyquist图。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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