Effect of laser-induced modification on structural properties and photoluminescence of amorphous arsenic sulfide thin films

IF 4 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-10-03 DOI:10.1007/s11082-025-08483-8

D. Shuleiko, E. Konstantinova, E. Kuzmin, I. Budagovsky, P. Pakholchuk, D. Pepelyaev, S. Zabotnov, A. Kolobov, S. Kozyukhin

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Abstract

In this study, we investigate laser-induced structural transformations in vitreous arsenic sulfide (As₂S₃) films deposited by thermal evaporation and spin-coating, as well as the corresponding changes in the photoluminescence (PL) properties of these films. The specified material is attractive for various applications in infrared optics and electronics, and it is important to improve its functionality by developing methods of its structural modification without changing the chemical composition. In our study pulsed (τ = 300 fs) and continuous laser irradiation at wavelengths of 515 and 532 nm respectively and a fluence of up to 56 mJ/cm² was used as means of As₂S₃ films modification. The results of the study reveal that, in the spin-coated As₂S₃, laser-induced formation of sulfur S₈ rings and polymer S chains takes place, while the local chemical composition of thermally evaporated films remains intact. PL intensity in the 1.6–2 eV range increases after laser treatment, due to creation of defect states in the Urbach edge region of the spectrum. Namely, the concentration of “wrong” homopolar bonds which act as radiative recombination centers for carriers, presumably increases, while paramagnetic defects in a form of S dangling bonds do not contribute to PL.

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激光诱导改性对非晶硫化砷薄膜结构性能及光致发光性能的影响

在这项研究中，我们研究了热蒸发和自旋镀膜沉积的玻璃体硫化砷（As2S3）薄膜的激光诱导结构转变，以及这些薄膜的光致发光（PL）性能的相应变化。该材料在红外光学和电子领域具有广泛的应用前景，在不改变其化学成分的前提下对其结构进行修饰，从而提高其功能是非常重要的。在我们的研究中，脉冲激光（τ = 300 fs）和连续激光分别在515和532 nm波长照射，影响高达56 mJ/cm2作为As2S3薄膜改性的手段。研究结果表明，在自旋包覆的As2S3中，激光诱导形成了硫S8环和聚合物S链，而热蒸发膜的局部化学成分保持不变。激光处理后，1.6-2 eV范围内的PL强度增加，这是由于在光谱的厄巴赫边缘区域产生了缺陷态。也就是说，作为载流子辐射重组中心的“错误”同极键的浓度可能会增加，而S悬空键形式的顺磁缺陷不会导致PL。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.