{"title":"Grain refinement and interfacial IMCs suppression via Zn addition to enhance the mechanical properties of Cu/Sn-58Bi/Cu microbump","authors":"Pin-Ling Lin, Zih-You Wu, Yin-Ku Lee, Zi-Xu Chen, Ta-Wei Lin, Po-Yu Chen, Jenq-Gong Duh","doi":"10.1007/s10854-025-15748-1","DOIUrl":null,"url":null,"abstract":"<div><p>The continuous downscaling of microbump dimensions to sub-10 μm presents critical challenges to joint reliability in advanced electronic packaging. In such fine-pitch systems, applying low-temperature solders such as Sn-58Bi is considered to minimize thermal stress and ensure process compatibility. However, excessive growth of interfacial intermetallic compounds (IMCs), as well as the inherent brittleness and grain coarsening of Sn-58Bi solder, significantly degrade mechanical integrity. To address these limitations and improve mechanical properties, this study investigates the effect of Zn addition into Cu substrates on the microstructure and mechanical performance of Cu/Sn-58Bi/Cu microbumps. Doping Zn resulted in the formation of a Cu(Zn,Sn) layer, which served as a diffusion barrier to inhibit interfacial IMC growth. It also refined the eutectic microstructure through Zn diffusion into the solder. Shear tests revealed that Cu-36Zn/Sn-58Bi/Cu-36Zn samples exhibited improved mechanical performance compared to Cu/Sn-58Bi/Cu samples, with an increase of 20.5% in shear strength and 31.1% in energy absorption. Fracture analyses were also conducted to elucidate the mechanisms behind the strengthening effect of Zn.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-15748-1.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15748-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The continuous downscaling of microbump dimensions to sub-10 μm presents critical challenges to joint reliability in advanced electronic packaging. In such fine-pitch systems, applying low-temperature solders such as Sn-58Bi is considered to minimize thermal stress and ensure process compatibility. However, excessive growth of interfacial intermetallic compounds (IMCs), as well as the inherent brittleness and grain coarsening of Sn-58Bi solder, significantly degrade mechanical integrity. To address these limitations and improve mechanical properties, this study investigates the effect of Zn addition into Cu substrates on the microstructure and mechanical performance of Cu/Sn-58Bi/Cu microbumps. Doping Zn resulted in the formation of a Cu(Zn,Sn) layer, which served as a diffusion barrier to inhibit interfacial IMC growth. It also refined the eutectic microstructure through Zn diffusion into the solder. Shear tests revealed that Cu-36Zn/Sn-58Bi/Cu-36Zn samples exhibited improved mechanical performance compared to Cu/Sn-58Bi/Cu samples, with an increase of 20.5% in shear strength and 31.1% in energy absorption. Fracture analyses were also conducted to elucidate the mechanisms behind the strengthening effect of Zn.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.