Effect of annealing temperature-dependent structural, morphological, optical, and electrical properties of hybrid perovskite-based solar cells: experimental and simulation approach

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hajar Benali, Bouchaib Hartiti, Fatima Lmai, Salma Smairi, Abdelkrim Batan, Philippe Thevenin
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Abstract

In the field of photovoltaic technology, perovskite solar cells are gaining increasing recognition for their unique qualities. The main topic of this research is the effect of the annealing temperatures, such as 80 °C, 100 °C, and 120 °C, on the growth of perovskite CH3NH3PbI3. A sol–gel method, combined with dip coating, has been used to synthesize methyl ammonium lead iodide (CH3NH3PbI3). The resulting films have been characterized using X-ray Diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), UV–Vis spectrophotometry, and the four-point probes method to identify the optimal temperature for the formation of the films. The XRD revealed a tetragonal structure in all perovskite films. These films have a direct bandgap of about 1.56 eV. Subsequently, using the experimental results, we have studied the characteristics of the perovskite solar cells (PSCs) with ITO/ZnMgO/MAPbI3/GO/Au structure employing a solar cell capacity simulator (SCAPS 1D). The thicknesses, defects, acceptor densities, interface defects, and temperature were analyzed and optimized. An efficiency of 23.16% was achieved with the ITO/ZnMgO (100 nm)/MAPbI3 (300 nm)/GO (280 nm)/Au structure. Our findings represent a significant advancement in experimental and simulation research for solar applications.

退火温度对杂化钙钛矿太阳能电池结构、形态、光学和电学性能的影响:实验和模拟方法
在光伏技术领域,钙钛矿太阳能电池以其独特的品质得到越来越多的认可。本研究的主要课题是80℃、100℃、120℃等退火温度对钙钛矿CH3NH3PbI3生长的影响。采用溶胶-凝胶法制备了碘化铅甲基铵(CH3NH3PbI3)。采用x射线衍射(XRD)、拉曼光谱(Raman)、扫描电子显微镜(SEM)、x射线能谱分析(EDS)、紫外可见分光光度法(UV-Vis)和四点探针法对所得薄膜进行了表征,以确定薄膜形成的最佳温度。XRD分析表明,所有钙钛矿薄膜均呈四方结构。这些薄膜的直接带隙约为1.56 eV。随后,我们利用太阳能电池容量模拟器(SCAPS 1D)研究了具有ITO/ZnMgO/MAPbI3/GO/Au结构的钙钛矿太阳能电池(PSCs)的特性。对厚度、缺陷、受体密度、界面缺陷和温度进行了分析和优化。ITO/ZnMgO (100 nm)/MAPbI3 (300 nm)/GO (280 nm)/Au结构的效率为23.16%。我们的发现在太阳能应用的实验和模拟研究方面取得了重大进展。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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