Doping-Induced Structural and Electrical Modifications in SbSI Nanowires Embedded in Graphene Oxide for Enhanced Optoelectronic Applications

Abstract

The growing demand for high-performance materials in electronics and optoelectronics has intensified the focus on one-dimensional (1D) nanostructures and their composites. This work introduces a novel, in-situ method for doping antimony sulfoiodide nanowires (SbSI NWs) onto graphene oxide (GO) nanosheets, a composite approach unexplored in prior literature An innovative in-situ method was developed to fabricate these GO-SbSI composites. Comprehensive characterization via XRD and FTIR confirmed the successful formation of SbSI NWs (JCPDS no. 88-0988) and their integration with GO, evidenced by the disappearance of specific FTIR peaks (e.g., ~2900 cm⁻¹) in the composites. SEM analysis revealed a reduction in SbSI NW size to approximately 3 µm post-compositing. The electrical and dielectric properties were profoundly enhanced by the doping process. The AC conductivity of the optimal composite (H3) reached 0.017 S/m, significantly surpassing that of pure GO (0.052 S/m) and pristine SbSI (2.17×10⁻⁴ S/m). The complex dielectric behavior was analyzed, with high low-frequency permittivity attributed to various polarization mechanisms. Most notably, the composites exhibited exceptional electromagnetic interference (EMI) shielding performance. The shielding effectiveness (SER) was dramatically enhanced from -20 dB for pure GO to an outstanding -56 dB for the H3 composite, indicating a transition from a weak shielding material to a powerful attenuator of electromagnetic radiation. These results unequivocally demonstrate that the strategic doping of GO with SbSI NWs creates a superior functional material with high potential for application in advanced EMI shielding and nano-electronic devices.