Two-Dimensional Tin Perovskite Photoelectric Transistor for High-Performance Photoelectric Controlled MOS Inverter.

Abstract

Two-dimensional (2D) tin (Sn) halide perovskites (HPs) are promising semiconductor materials for environmentally friendly lead-free photoelectric transistors. Herein, 2D perovskites (PEA)2MAn-1SnnI3n+1 are successfully prepared by introducing large phenylethylamine (PEA) cations. The effect of the dimensional structure on the photoelectric performances of (PEA)2MAn-1SnnI3n+1 is investigated. The electrical performances of (PEA)2MAn-1SnnI3n+1 photoelectric transistors are significantly improved by regulating the dimensional microstructure of the perovskites. The (PEA)2MA6Sn7I22 (n = 7) photoelectric transistor shows n-type charge transport and excellent electrical properties with a linear mobility of 11.8 cm2·V-1·s-1, with a low subthreshold swing (SS) of 0.38 V·decade-1 and a detectivity (D*) of 2.6 × 108 Jones. The standard deviation of performance parameters across 6 batches is less than 0.1 exhibiting a high level of consistency in device performance from batch to batch and good reproducibility. When stored in an N2 glovebox for 15 days, the electron mobility of the device remained at 5.96 cm2·V-1·s-1, confirming their good long-term reliability. Additionally, the photoelectrically controlled metal-oxide-semiconductor (MOS) inverter is constructed by connecting the (PEA)2MA6Sn7I22 photoelectric transistor with a resistor, thus enabling logic values to be converted via photoelectric control at a low on-power consumption of 18 μW. The gain of the inverter was still maintained at 30 under varying test conditions, exhibiting remarkable stability. The developed high-gain photoelectric controlled MOS inverter with low energy consumption is applicable to portable electronic circuits.