Self-Powered Polarized Photodetection and Low-Voltage Modulated Bidirectional Visual Synapse of Ta2NiS5/MoS2/Gr Vertical Heterojunction with Asymmetric Interface Modulation.

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Hui Peng,Pengfei Hou
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引用次数: 0

Abstract

Modern application scenarios increasingly demand multifunctional integrated photodetectors with high efficiency and low-power consumption. However, existing two-dimensional (2D) heterojunction-based devices face critical challenges. For instance, metal-semiconductor contacts can induce Schottky barriers and Fermi level pinning, which hinder carrier transport and degrade overall performance. To address these issues, this work proposes a vertical van der Waals heterojunction design, employing graphene (Gr) as the top electrode, tantalum nickel sulfide (Ta2NiS5) with a narrow-bandgap and anisotropy as the bottom electrodes, and molybdenum disulfide (MoS2) as the main light-absorbing layer. This architecture engineers reverse built-in electric fields at Ta2NiS5/MoS2 and MoS2/Gr interfaces and replaces Schottky contacts with ohmic-like transport, leveraging Ta2NiS5's anisotropy and interfacial asymmetry to integrate multiple functions. Under 660 nm light illumination (249.24 mW/cm2), it achieves a high photocurrent density of 171 mA/cm2 and an on/off ratio of 3.7 × 104. Under 808 nm light illumination, a self-powered anisotropy ratio of 6.03 is realized. It exhibits excitatory postsynaptic currents (EPSC) under 1064 nm light illumination with an ultralow energy consumption of 82 fJ, alongside bidirectional synaptic weight modulation via bias polarity and light pulse (duration, intensity, and number) control. This integrated design paves the way for advancing multifunctional optoelectronic devices in next-generation integrated systems and artificial intelligence applications.
非对称界面调制Ta2NiS5/MoS2/Gr垂直异质结的自供电极化光探测和低压调制双向视觉突触。
现代应用场景对高效、低功耗的多功能集成光电探测器的需求日益增长。然而,现有的二维(2D)异质结器件面临着严峻的挑战。例如,金属-半导体接触会诱发肖特基势垒和费米能级钉住,从而阻碍载流子传输并降低整体性能。为了解决这些问题,本工作提出了一种垂直范德华异质结设计,采用石墨烯(Gr)作为顶部电极,具有窄带隙和各向异性的硫化镍钽(Ta2NiS5)作为底部电极,二硫化钼(MoS2)作为主要吸光层。该架构工程师在Ta2NiS5/MoS2和MoS2/Gr界面反转内置电场,并用类欧姆传输取代肖特基接触,利用Ta2NiS5的各向异性和界面不对称性来集成多种功能。在660 nm光照(249.24 mW/cm2)下,光电流密度达到171 mA/cm2,通断比为3.7 × 104。在808 nm光照下,实现了6.03的自供电各向异性比。它在1064 nm光照下表现出兴奋性突触后电流(EPSC),超低能量消耗为82 fJ,同时通过偏置极性和光脉冲(持续时间、强度和数量)控制双向突触权重调制。这种集成设计为推进下一代集成系统和人工智能应用中的多功能光电器件铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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