Semiconductor Disk Laser Based on a GaInP/AlGaInP Heterostructure with Intracavity Pumping into Quantum Wells

Abstract

A pulsed semiconductor disk laser emitting at a wavelength of 642.5 nm based on a GaInP/AlGaInP heterostructure with intracavity pumping into 25 quantum wells by 614.5-nm radiation from a dye laser has been studied for the first time. A pulsed power of ~80 W has been achieved at a pulse duration of ~0.5 μs. The power is limited by the destruction of the structure. The time modulation of radiation of the dye laser with a heterostructure inside the cavity with a period of ~6 ns equal to the cavity round-trip time has been detected.