One-Step Laser-Induced Oxidation and Doping for Tailored p-Type Conversion of Al-Doped TiO2 (Small 39/2025)

IF 12.1 2区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Small Pub Date : 2025-10-02 DOI:10.1002/smll.70300

Gyuwon Yang, Junil Kim, Byeongmoon Lee, Jae Eun Jang, Hyuk-Jun Kwon

引用次数: 0

Abstract

Metal Oxide Semiconductors

A laser-assisted oxidation and doping strategy enables one-step formation of Al-doped TiO₂, achieving p-type conductivity through selective Al diffusion above the threshold laser power. This method overcomes the intrinsic n-type nature of TiO₂, offering a CMOS-compatible route for type conversion. The approach provides precise spatial control, enhanced hole transport, and scalability for next-generation oxide electronics and 3D integration. More in article number 2502139, Hyuk-Jun Kwon and co-workers.

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一步激光诱导氧化和掺杂al掺杂TiO2定制p型转化（Small 39/2025）

金属氧化物半导体激光辅助氧化和掺杂策略可以一步形成Al掺杂TiO2，通过选择性Al扩散在阈值激光功率上实现p型电导率。该方法克服了TiO2固有的n型性质，为类型转换提供了一种cmos兼容的途径。该方法提供了精确的空间控制，增强的空穴传输，以及下一代氧化物电子和3D集成的可扩展性。更多内容见文章编号2502139，权赫俊和同事。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Small 工程技术-材料科学：综合

CiteScore

17.70

自引率

3.80%

发文量

1830

审稿时长

2.1 months

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