{"title":"Ru/IrMn Interfacial Orbital-to-Spin Conversion for Antiferromagnetic Switching in Magnetic Tunnel Junctions.","authors":"Yue Bai,Wenlong Cai,Zanhong Chen,Daoqian Zhu,Shiyang Lu,Jiaxu Li,Ao Du,Kaihua Cao,Guang Yang,Hongxi Liu,Kewen Shi,Weisheng Zhao","doi":"10.1021/acs.nanolett.5c03188","DOIUrl":null,"url":null,"abstract":"Current-induced antiferromagnetic (AFM) switching is critical for advancing spintronic technologies and expanding their functional landscape. Recently, the orbital Hall effect (OHE) has emerged as a promising mechanism for efficient control of AFM orders, though experimental validation has remained elusive. In this work, we successfully demonstrate efficient orbital-to-spin conversion in Ru/IrMn heterostructure, which enables significant enhancement of both OHE-induced damping-like and field-like torque efficiencies of 0.86 × 105 Ω-1m-1 and 3.01 × 105 Ω-1m-1, respectively. We further investigate the underlying orbital and spin diffusion behavior, revealing a rapid and efficient interfacial conversion mechanism. Additionally, we achieve complete, field-free OHE-induced AFM switching in 80 nm Ru/IrMn-based exchange-bias magnetic tunnel junctions (EB-MTJs), with an ultrafast 0.2 ns write speed and low energy consumption. These results establish a viable route for orbitronic manipulation of AFMs and offer a promising approach for ultrafast, low-power, and scalable spintronic devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"18 1","pages":""},"PeriodicalIF":9.1000,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.5c03188","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Current-induced antiferromagnetic (AFM) switching is critical for advancing spintronic technologies and expanding their functional landscape. Recently, the orbital Hall effect (OHE) has emerged as a promising mechanism for efficient control of AFM orders, though experimental validation has remained elusive. In this work, we successfully demonstrate efficient orbital-to-spin conversion in Ru/IrMn heterostructure, which enables significant enhancement of both OHE-induced damping-like and field-like torque efficiencies of 0.86 × 105 Ω-1m-1 and 3.01 × 105 Ω-1m-1, respectively. We further investigate the underlying orbital and spin diffusion behavior, revealing a rapid and efficient interfacial conversion mechanism. Additionally, we achieve complete, field-free OHE-induced AFM switching in 80 nm Ru/IrMn-based exchange-bias magnetic tunnel junctions (EB-MTJs), with an ultrafast 0.2 ns write speed and low energy consumption. These results establish a viable route for orbitronic manipulation of AFMs and offer a promising approach for ultrafast, low-power, and scalable spintronic devices.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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- Modeling and simulation of synthetic, assembly, and interaction processes
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- Applications of nanoscale materials in living and environmental systems
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