{"title":"Dynamic Structure Evolution under Invariant Lattice Framework in Fluorite-Type Ferroelectrics.","authors":"Yunzhe Zheng,Heng Yu,Tianjiao Xin,Kan-Hao Xue,Yilin Xu,Zhaomeng Gao,Cheng Liu,Qiwendong Zhao,Yonghui Zheng,Xiangshui Miao,Yan Cheng","doi":"10.1021/acs.nanolett.5c03512","DOIUrl":null,"url":null,"abstract":"Insightful design of HfO2-based ferroelectric (FE) devices for encoding and storage necessitates a comprehensive understanding of the dynamics governing structure evolution. However, conclusive experimental evidence remains limited. Here, by in situ biasing directly on the TiN/Hf0.5Zr0.5O2/TiN FE capacitors and combining theoretical calculations, we reveal the atomic-scale domain structure evolution via a transient polar orthorhombic (O)-Pmn21-like configuration. Direct atomic evidence demonstrates that the antipolar O-Pbca phase could transform into the FE O-Pbc21 phase under electric fields, and the polar axis of the FE phase aligns toward the bias direction through a ferroelastic transformation, thereby enhancing FE polarization. As the bias increases, the polar axis collapses, leading to FE degradation. Throughout the process of domain structure evolution, the lattice framework retains its integrity without alteration. These insights into the intricate structure evolution under electrical field cycling facilitate optimization and design strategies for HfO2-based FE memory devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"214 1","pages":""},"PeriodicalIF":9.1000,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.5c03512","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Insightful design of HfO2-based ferroelectric (FE) devices for encoding and storage necessitates a comprehensive understanding of the dynamics governing structure evolution. However, conclusive experimental evidence remains limited. Here, by in situ biasing directly on the TiN/Hf0.5Zr0.5O2/TiN FE capacitors and combining theoretical calculations, we reveal the atomic-scale domain structure evolution via a transient polar orthorhombic (O)-Pmn21-like configuration. Direct atomic evidence demonstrates that the antipolar O-Pbca phase could transform into the FE O-Pbc21 phase under electric fields, and the polar axis of the FE phase aligns toward the bias direction through a ferroelastic transformation, thereby enhancing FE polarization. As the bias increases, the polar axis collapses, leading to FE degradation. Throughout the process of domain structure evolution, the lattice framework retains its integrity without alteration. These insights into the intricate structure evolution under electrical field cycling facilitate optimization and design strategies for HfO2-based FE memory devices.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
- Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale
- Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies
- Modeling and simulation of synthetic, assembly, and interaction processes
- Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance
- Applications of nanoscale materials in living and environmental systems
Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.