Ultra-highly linear Ga2O3-based cascade heterojunctions optoelectronic synapse with thousands of conductance states for neuromorphic visual system.

Abstract

Ultrawide bandgap semiconductor optoelectronic synapses can perform high-parallel computing with a low false alarm rate, making them ideal for building deep-ultraviolet (DUV) neuromorphic visual system (NVS). However, the rapid carrier recombination in these optoelectronic synapses results in a poor number of conductance states and a low linear weight update protocol, consequently degrading the image recognition accuracy of DUV NVSs. This work proposes a type of cascade heterojunctions capable of finely tuning the dynamics of photogenerated carriers, utilizing aluminum interdigital electrodes sandwiched between tin-doped Ga2O3 and oxygen-deficient hafnium oxide (GTO/Al/HfOx) films. The built-in fields at the GTO/HfOx heterojunction and the Al/HfOx hole Schottky junction interfaces facilitate the separation of photogenerated carriers and the subsequent trapping of holes by the oxygen defects in the HfOx, respectively. The GTO/Al/HfOx optoelectronic synapses exhibit an ultrahigh responsivity of over 104 A/W and a large photo-to-dark current ratio of 6 × 105, which results in exceptional synaptic plasticity with unprecedented 4096 conductance states and excellent linearity with a fitting coefficient of 0.992. These attributes enable the GTO/Al/HfOx optoelectronic synapses to execute logical operations with fault-tolerance capability and to achieve high-accuracy fingerprint classification. The innovative cascade heterojunctions design, along with the elucidated carrier dynamics modulation mechanism, facilitates the development of DUV NVSs.