Field driven evolution of periodic antiferromagnetic skyrmion in non-centrosymmetric semiconducting monolayer

IF 5.1 3区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Nanoscale Pub Date : 2025-09-29 DOI:10.1039/d5nr03229f
Liyenda Gogoi, P. Deb
{"title":"Field driven evolution of periodic antiferromagnetic skyrmion in non-centrosymmetric semiconducting monolayer","authors":"Liyenda Gogoi, P. Deb","doi":"10.1039/d5nr03229f","DOIUrl":null,"url":null,"abstract":"Antiferromagnetic skyrmions are topologically protected, stable nanoscale spin textures with countable particle-like properties, which are resistant to skyrmion Hall effect, and suitable for high-density data storage spintronic applications. However, the absence of long-range periodic antiferromagnetic skyrmion order in dynamically stable single-layer semiconducting materials hinders the compatibility and integrability of skyrmion-based devices with existing semiconductor-based technologies. Here, in this work, we demonstrate the nucleation of periodic antiferromagnetic skyrmions in a Janus non-centrosymmetric semiconducting monolayer, MnBrCl. In the Janus monolayer with a unique antiferromagnetic double-stranded helical ground state configuration of magnetic moments, a periodic antiferromagnetic skyrmion is nucleated under a magnetic field, which has not been reported previously. We have thoroughly investigated the microscopic origin of this periodic, topologically protected structure and propose a four-sublattice framework that explains the field-driven nucleation of antiferromagnetic skyrmions. This mechanism of antiferromagnetic skyrmion evolution, based on the four-sublattice framework, offers a new perspective on the formation of periodic antiferromagnetic skyrmions. Our analysis also provides deeper insight into the controllability of magnetic topology in Janus non-centrosymmetric material. Further, the magnetic tunability of the nucleated periodic AFM skyrmions suggests suitability of the materials for parallel processing applications in multi-state memory devices and neuromorphic computing, thereby enriching the domain of AFM skyrmion based spintronic.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":"17 1","pages":""},"PeriodicalIF":5.1000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d5nr03229f","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Antiferromagnetic skyrmions are topologically protected, stable nanoscale spin textures with countable particle-like properties, which are resistant to skyrmion Hall effect, and suitable for high-density data storage spintronic applications. However, the absence of long-range periodic antiferromagnetic skyrmion order in dynamically stable single-layer semiconducting materials hinders the compatibility and integrability of skyrmion-based devices with existing semiconductor-based technologies. Here, in this work, we demonstrate the nucleation of periodic antiferromagnetic skyrmions in a Janus non-centrosymmetric semiconducting monolayer, MnBrCl. In the Janus monolayer with a unique antiferromagnetic double-stranded helical ground state configuration of magnetic moments, a periodic antiferromagnetic skyrmion is nucleated under a magnetic field, which has not been reported previously. We have thoroughly investigated the microscopic origin of this periodic, topologically protected structure and propose a four-sublattice framework that explains the field-driven nucleation of antiferromagnetic skyrmions. This mechanism of antiferromagnetic skyrmion evolution, based on the four-sublattice framework, offers a new perspective on the formation of periodic antiferromagnetic skyrmions. Our analysis also provides deeper insight into the controllability of magnetic topology in Janus non-centrosymmetric material. Further, the magnetic tunability of the nucleated periodic AFM skyrmions suggests suitability of the materials for parallel processing applications in multi-state memory devices and neuromorphic computing, thereby enriching the domain of AFM skyrmion based spintronic.
非中心对称半导体单层中周期性反铁磁斯基米子的场驱动演化
反铁磁斯基米子是一种受拓扑保护的、稳定的纳米级自旋织构,具有可计数的粒子样性质,可抵抗斯基米子霍尔效应,适合高密度数据存储的自旋电子应用。然而,动态稳定的单层半导体材料中缺乏长周期反铁磁斯基米子序,阻碍了斯基米子器件与现有半导体技术的兼容性和可积性。在这里,在这项工作中,我们证明了在Janus非中心对称半导体单层MnBrCl中周期性反铁磁天子的成核。在具有独特的反铁磁双链螺旋基态磁矩构型的Janus单层中,一个周期性的反铁磁斯基子在磁场下成核,这是以前没有报道过的。我们已经彻底研究了这种周期性的、拓扑保护结构的微观起源,并提出了一个四亚晶格框架来解释反铁磁天子的场驱动成核。这种基于四亚晶格框架的反铁磁天子演化机制,为研究周期性反铁磁天子的形成提供了新的视角。我们的分析也为Janus非中心对称材料的磁拓扑的可控性提供了更深入的见解。此外,有核周期性原子力显微镜的磁性可调性表明该材料适合于多态存储器件和神经形态计算的并行处理应用,从而丰富了基于原子力显微镜的自旋电子领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nanoscale
Nanoscale CHEMISTRY, MULTIDISCIPLINARY-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
12.10
自引率
3.00%
发文量
1628
审稿时长
1.6 months
期刊介绍: Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.
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