Mg-Doped P-Type AlN Thin Film Prepared by Magnetron Sputtering Using Mg-Al Alloy Targets.

Abstract

Aluminum nitride (AlN), a III-V wide-bandgap semiconductor, has attracted significant attention for high-temperature and high-power applications. However, achieving p-type doping in AlN remains challenging. In this study, p-type AlN thin films were fabricated via magnetron sputtering using Mg-Al alloy targets with varying Mg concentrations (0.01 at.%, 0.02 at.%, and 0.5 at.%), followed by ex situ high-temperature annealing to facilitate Mg diffusion and electrical activation. The structural, morphological, and electrical properties of the films were systematically characterized using X-ray diffraction (XRD), white light interferometry (WLI), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and Hall effect measurements. The results demonstrate that at a Mg doping concentration of 0.02 at.%, the films exhibit optimal crystallinity, uniform Mg distribution, and a favorable balance between carrier concentration and mobility, resulting in effective p-type conductivity. Increasing Mg doping leads to higher surface roughness and the formation of columnar and conical grain structures. While high Mg doping (0.5 at.%) significantly increases carrier concentration and decreases resistivity, it also reduces mobility due to enhanced impurity and carrier-carrier scattering, negatively impacting hole transport. XPS and EDS analyses confirm Mg incorporation and the formation of Mg-N and Al-Mg bonds. Overall, this study indicates that controlled Mg doping combined with high-temperature annealing can achieve p-type AlN films to a certain extent, though mobility and carrier activation remain limited, providing guidance for the development of high-performance AlN-based bipolar devices.