Gate-Induced Static and Dynamic Nonlinearity Characteristics of Bilayer Graphene Field-Effect Transistors (Bi-GFETs).

Abstract

In this study, the nonlinearity characteristics of bilayer graphene field-effect transistors (Bi-GFETs) are analyzed by using a small-signal equivalent circuit. The static nonlinearity is determined by applying mathematical operation on the drain current equation of Bi-GFETs. Furthermore, the closed expressions for the second- and third-order harmonic distortion (HD) and the intermodulation (IM) distortion of the second- and third-order for Bi-GFETs are analyzed graphically. Dynamic nonlinearity is studied and illustrated in the results by examining the input and output characteristics; i.e., the drain current versus the negative drain to the source voltage and the transfer characteristic curve at various gate voltages controlled by both the top gate as well as the back gate. The characteristic behavior of the gate voltage in Bi-GFETs at short channel lengths is observed and compared; that is, the characteristic curves exhibits strong nonlinearity, with a low power point with some kinks at high gate biasing and a constant linear region at low gate biasing. The quantitative values of the second-order harmonic distortion (HD) and intermodulation distortion (IM) of the proposed analytical model are -40 dB and -45 dB. Quantitative and qualitative outcomes of the characteristics of Bi-GFETs are compared with existing experimental data, which is available in the literature.