Effect of Bias Voltage on the Crystal Growth of AlN(002) Thin Films Fabricated by Reactive Magnetron Sputtering.

Abstract

The study investigates the influence of bias voltage on the structural and morphological properties of aluminum nitride AlN (002) thin films deposited on sapphire substrates via reactive magnetron sputtering for high-frequency surface acoustic wave (SAW) devices. The results indicate that applying a positive bias voltage (>0 V) yields AlN films with compact and uniform surfaces. As bias increases, the deposition rate initially rises before declining, while root-mean-square (RMS) roughness progressively decreases, reaching a minimum at 100 V, significantly enhancing surface quality. X-ray diffraction (XRD) analysis reveals enhanced (002) preferential orientation with increasing bias, indicating improved crystallinity. These findings demonstrate that optimized bias voltage not only refines surface morphology but also strengthens crystal alignment, particularly along the (002) plane, making AlN films highly suitable for high-frequency SAW applications, and provides data for the preparation of higher-quality AlN films.