Beyond Transistor Miniaturization: A Single-Device Approach to Reconfigurable Logic Gates in 2D Organic Single-Crystalline Heterojunctions.

IF 26.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Xianshuo Wu, Xinzi Tian, Jiarong Yao, Zhaofeng Wang, Shuyuan Yang, Yanling Xiao, Siyuan Zhang, Yan Wang, Xiaochen Ren, Jiansheng Jie, Fangxu Yang, Rongjin Li, Wenping Hu
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Abstract

Reconfigurable device architectures are crucial for overcoming the scaling limitations of organic electronics. In this study, a single-device platform is presented that integrates transistor, rectifier, and logic gate functionalities using molecularly thin 2D organic single-crystalline heterojunctions. The reconfigurable asymmetric heterojunction (RAH), featuring a drain-aligned p-n interface, enables polarity-controlled switching between Fowler-Nordheim tunneling and thermally activated injection, achieving a record rectification ratio of 1.1 × 108 and a dynamic rectification window spanning eight orders of magnitude. The asymmetric injection also induces a significant bias-polarity-dependent photoresponse, with a maximum photoresponsivity of 788 A W-1 and a specific detectivity of 1.17 × 1014 Jones under positive bias, and a substantially suppressed photoresponse due to heterointerface recombination under negative bias. The synergistic interplay between electrostatic gating and bias-modulated photocarrier transport further enables real-time reconfiguration between AND and OR logic operations within a single device, effectively doubling functional density. These results position 2D RAHs as building blocks for compact, reconfigurable optoelectronic circuits.

超越晶体管小型化:二维有机单晶异质结中可重构逻辑门的单器件方法。
可重构器件架构对于克服有机电子学的缩放限制至关重要。在这项研究中,提出了一个单器件平台,该平台使用分子薄的二维有机单晶异质结集成了晶体管,整流器和逻辑门功能。可重构的非对称异质结(RAH)具有漏极排列的p-n界面,可以在Fowler-Nordheim隧道和热激活注入之间进行极性控制切换,实现创纪录的1.1 × 108整流比和跨越8个数量级的动态整流窗口。不对称注入还诱导了显著的偏置-极性依赖光响应,在正偏置下,最大光响应率为788 a W-1,比探测率为1.17 × 1014 Jones,而在负偏置下,由于异质界面复合,光响应被明显抑制。静电门控和偏置调制光载流子输运之间的协同相互作用进一步实现了单个器件内and和OR逻辑运算之间的实时重构,有效地使功能密度加倍。这些结果将2D RAHs定位为紧凑,可重构光电电路的构建模块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Materials
Advanced Materials 工程技术-材料科学:综合
CiteScore
43.00
自引率
4.10%
发文量
2182
审稿时长
2 months
期刊介绍: Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.
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