Magnetic properties of Bi-substituted M-type Barium hexaferrites in the region of single-phase state

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-26 DOI:10.1007/s10854-025-15825-5

A. V. Trukhanov, V. A. Turchenko, V. G. Kostishin, S. V. Trukhanov, I. A. Hrekau

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Abstract

Main idea of the paper is to find confirmation of the mechanism of chemical substitution by isovalent ions with a large-ion radius (in this case Bi ions) in the structure of M-type hexagonal ferrite. There are two hypotheses on the distribution pattern of large-radius substituent ions in the hexaferrite structure. According to one hypothesis, the substitution should occur in B positions (by substituting Fe³⁺ ions) of AFe₁₂O₁₉. This is reasonable due to the isovalence of the Bi and Fe ions and is supported by the stoichiometry. According to the second hypothesis, the substitution should occur in A positions (Bi³⁺ can substitute for a commensurate Ba²⁺ ion). This is reasonable due to the ionic size of the Ba and Bi ions and the tolerance factor principle. BaFe_12-xBi_xO₁₉ (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions were produced by solid-state reactions. There are a lot of techniques used to investigate prepared samples. It was determined that the single-phase region is 0.1 ≤ x ≤ 0.5. It was shown that samples with 0.1 ≤ x ≤ 0.5 contain only one phase that can be described in the frame of P6₃/mmc. For the sample with x = 0.6, impurity phases were observed: BiFeO₃ (3.45 vol.%) and BiO₂ (1.44 vol.%). It was shown that the increase of the Bi concentration from 0.1 to 0.6 leads to a decrease in the main magnetic parameters: saturation magnetization from 53.48 to 51.45 emu/g; remnant magnetization from 27.91 to 23.71 emu/g; and coercivity from 2.6 to 1.3 kOe. Based on concentration dependences of the main magnetic parameters, we suggest that B-site substitution is realized in BaFe_12-xBi_xO₁₉ (0.1 ≤ x ≤ 0.6, ∆= 0.1) solid solutions.

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双取代m型钡六铁氧体在单相区的磁性能

本文的主要思想是在m型六方铁氧体结构中寻找大离子半径的等价离子（本例中为Bi离子）的化学取代机理的确证。大半径取代离子在六铁体结构中的分布模式有两种假设。根据一种假设，取代应该发生在AFe12O19的B位（通过取代Fe3+离子）。这是合理的，因为Bi和Fe离子的等价性，并得到了化学计量学的支持。根据第二个假设，取代应该发生在A位（Bi3+可以取代相称的Ba2+离子）。由于Ba和Bi离子的离子大小和容差系数原理，这是合理的。固相反应生成BaFe12-xBixO19（0.1≤x≤0.6,∆= 0.1）固溶体。有许多技术用于研究制备的样品。确定单相区为0.1≤x≤0.5。结果表明，0.1≤x≤0.5的样品只包含一个相，可以在P63/mmc框架中描述。对于x = 0.6的样品，观察到杂质相：BiFeO3 （3.45 vol.%）和BiO2 （1.44 vol.%）。结果表明，当Bi浓度由0.1增加到0.6时，主要磁性参数降低：饱和磁化强度由53.48 emu/g降低到51.45 emu/g；剩余磁化强度为27.91 ~ 23.71 emu/g；矫顽力为2.6 ~ 1.3克。基于主要磁性参数的浓度依赖性，我们认为在BaFe12-xBixO19（0.1≤x≤0.6,∆= 0.1）固溶体中可以实现b位取代。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.