M. N. Martyshov, I. D. Kuchumov, B. S. Shvetsov, D. M. Zhigunov, A. S. Ilyin, P. A. Forsh, P. K. Kashkarov
{"title":"Impedance Spectroscopy of Memristive Structures Based on Hafnium Oxide","authors":"M. N. Martyshov, I. D. Kuchumov, B. S. Shvetsov, D. M. Zhigunov, A. S. Ilyin, P. A. Forsh, P. K. Kashkarov","doi":"10.1134/S2635167624602699","DOIUrl":null,"url":null,"abstract":"<p>Memristive structures of Ti/HfO<sub>2</sub>/Au/<i>c</i>-Si, which are characterized by high ductility, are studied using the impedance spectroscopy method. Impedance hodographs are obtained for several stable resistive states. An equivalent circuit is proposed that takes into account the change in the resistance of filaments during their growth and allows for a good description of the observed changes in the type of the hodograph. Using simulation, the numerical values of the equivalent-circuit parameters are calculated. It is shown that during the switching process a significant change in the capacitance of the structure occurs. The data obtained allow us to better understand the processes that occur in such structures during switching, and open up the possibility of creating elements in which both resistance and capacitance can be controllably changed simultaneously.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"20 1","pages":"88 - 92"},"PeriodicalIF":0.8000,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1134/S2635167624602699.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnologies in Russia","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S2635167624602699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
Memristive structures of Ti/HfO2/Au/c-Si, which are characterized by high ductility, are studied using the impedance spectroscopy method. Impedance hodographs are obtained for several stable resistive states. An equivalent circuit is proposed that takes into account the change in the resistance of filaments during their growth and allows for a good description of the observed changes in the type of the hodograph. Using simulation, the numerical values of the equivalent-circuit parameters are calculated. It is shown that during the switching process a significant change in the capacitance of the structure occurs. The data obtained allow us to better understand the processes that occur in such structures during switching, and open up the possibility of creating elements in which both resistance and capacitance can be controllably changed simultaneously.
期刊介绍：
Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
