Quadruple-layer antireflection coating for high-efficiency IMM3J solar cells by GLAD

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-24 DOI:10.1007/s10854-025-15820-w

Jiwen Li, He Wang, Shuyi Mo, Fei Long

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Abstract

A quasi-gradient refractive index quadruple-layer antireflection coating (QLARC) nano-MgF₂/ZnS/MgF₂/ZnS was designed for inverted metamorphic triple junction (IMM3J) solar cells, with optimization and simulation using the Essential Macleod. The top layer nanoporous MgF₂ (nano-MgF₂) film was fabricated utilizing the glancing angle deposition (GLAD) technique, achieving tailored refractive indices from 1.39 to 1.20 through controlling deposition angle (θ_α = 24°-89°). The photovoltaic performance of quasi-gradient QLARC was compared with that of a conventional double-layer antireflection coating (DLARC). Both DLARC and QLARC reduced the solar spectrum-weighted average reflectance (SSWAR) of IMM3J solar cells by 23.46% and 25.45%, respectively, in the wavelength range of 300–1300 nm. By reducing optical loss, both DLARC and QLARC enhanced the external quantum efficiency (EQE) of IMM3J solar cells, thus increasing the short-circuit current (J_sc) by 29.4% and 32.9%, respectively, compared to uncoated solar cells (AM0, 1-sun). The IMM3J solar cell with QLARC achieves a power conversion efficiency (PCE) of 31.8%, which is higher than that of the cells without ARC (23.7%) and with DLARC (30.6%). In comparison with DLARC, the nano-MgF₂/ZnS/MgF₂/ZnS demonstrated better broadband antireflection properties and enhanced electrical performance in IMM3J solar cells, as confirmed by simulation and experiment.

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高效IMM3J太阳能电池的四层增透涂层

设计了一种准梯度折射率四层减反射涂层（QLARC）纳米MgF2/ZnS/MgF2/ZnS，用于倒变质三结（IMM3J）太阳能电池，并利用Essential Macleod进行了优化和仿真。利用掠射角沉积（GLAD）技术制备了顶层纳米多孔MgF2 （nano-MgF2）薄膜，通过控制沉积角（θα = 24°-89°），获得了1.39 ~ 1.20的折射率。比较了准梯度QLARC与传统双层增透涂层（DLARC）的光伏性能。在300 ~ 1300 nm波长范围内，DLARC和QLARC分别使IMM3J太阳能电池的太阳光谱加权平均反射率（SSWAR）降低了23.46%和25.45%。通过降低光损耗，DLARC和QLARC均提高了IMM3J太阳能电池的外量子效率（EQE），从而使短路电流（Jsc）比未涂膜的太阳能电池（am0,1 -sun）分别提高了29.4%和32.9%。添加了QLARC的IMM3J太阳能电池的功率转换效率（PCE）为31.8%，高于未添加ARC的23.7%和添加了DLARC的30.6%。与DLARC相比，纳米MgF2/ZnS/MgF2/ZnS在IMM3J太阳能电池中表现出更好的宽带增透性能和更高的电学性能。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.