Exploring thermoelectric properties of hydrothermally synthesized Ag-doped SnS material

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sanju Choudhari, Dinesh Kumar Kedia, Manisha Yadav, Pradeep kumar, Pura Ram
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Abstract

In recent years, tin sulfide (SnS), a layered chalcogenide material, has attracted considerable interest for its low toxicity, earth abundance, and promising thermoelectric (TE) properties. In this study, polycrystalline SnS samples—both undoped and Ag (2 at% and 4 at%)-doped were synthesized via a cost-effective and time-efficient hydrothermal method aimed at enhancing TE performance via nanostructuring and grain boundary scattering. X-ray diffraction (XRD) confirmed the phase purity, while Field Emission Scanning Electron Microscopy (FESEM) revealed sheet-like morphologies, and Energy-Dispersive X-ray (EDX) spectroscopy confirmed the elemental composition of the sample. UV–Vis spectroscopy indicated a reduced band gap of 1.28 eV for the 4 at% Ag-doped SnS, suggesting enhanced electronic properties. Fourier Transform Infrared (FTIR) spectroscopy identified the chemical bonds and functional groups present, and Thermogravimetric analysis (TGA) confirmed thermal stability up to 600 °C. Notably, undoped SnS exhibited the lowest thermal conductivity (0.18 W·m−1·K⁻1 at 620 K), while Ag-doped samples showed slightly higher values due to increased carrier concentration (n) from hole doping. Electrical conductivity significantly improved after Ag doping, reaching 45.34 S/m at 620 K. However, the Seebeck coefficient values decreased for Ag-doped samples in comparison to undoped SnS due to the increase in n. To the best of our knowledge, the measured thermal conductivities are the lowest reported for doped SnS at this temperature. Our study presents that the hydrothermal method for synthesis is an effective and scalable approach for synthesizing SnS-based thermoelectric materials with ultralow thermal conductivity, making it a viable alternative to more expensive and complex fabrication techniques.

水热合成掺银SnS材料的热电性能研究
近年来,硫化锡(sn)作为一种层状硫系物质,因其低毒、富土、热电(TE)特性而引起了人们的广泛关注。在本研究中,通过经济高效的水热方法合成了未掺杂和掺杂Ag (2 at%和4 at%)的多晶SnS样品,旨在通过纳米结构和晶界散射增强TE性能。x射线衍射(XRD)证实了样品的相纯度,场发射扫描电子显微镜(FESEM)显示了片状形貌,能量色散x射线(EDX)光谱证实了样品的元素组成。紫外可见光谱显示,4 at% ag掺杂的SnS的带隙减小了1.28 eV,表明电子性能增强。傅里叶变换红外光谱(FTIR)鉴定了存在的化学键和官能团,热重分析(TGA)证实了高达600°C的热稳定性。值得注意的是,未掺杂的SnS表现出最低的热导率(在620 K时为0.18 W·m−1·K⁻1),而ag掺杂的样品由于空穴掺杂增加了载流子浓度(n)而表现出略高的热导率。Ag掺杂后电导率显著提高,在620 K时达到45.34 S/m。然而,由于n的增加,与未掺杂的SnS相比,ag掺杂样品的塞贝克系数值降低了。据我们所知,在该温度下,测量的导热系数是掺杂SnS中最低的。我们的研究表明,水热合成方法是一种有效的、可扩展的方法,可以合成具有超低导热系数的氮化硅基热电材料,使其成为更昂贵和复杂的制造技术的可行替代方案。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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