Dependence of optoelectronic properties of IGZO thin films deposited by RF magnetron sputtering on initial vacuum pressure

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-09-24 DOI:10.1007/s10854-025-15780-1

Shuai Yuan, Wei Zhang, Shumin Yang

{"title":"Dependence of optoelectronic properties of IGZO thin films deposited by RF magnetron sputtering on initial vacuum pressure","authors":"Shuai Yuan, Wei Zhang, Shumin Yang","doi":"10.1007/s10854-025-15780-1","DOIUrl":null,"url":null,"abstract":"<div>The structures and characteristics of Indium-Gallium-Zinc-Oxide(IGZO) transparent semiconducting films prepared by magnetron sputtering can be influenced by various factors. However, the role of the initial vacuum pressure is seldom investigated, especially on the photoelectric properties of amorphous IGZO films (α-IGZO films). Herein, high-quality, transparent conductive α-IGZO films were deposited by radio frequency (RF) magnetron sputtering at 200 ℃ under various initial vacuum pressures ranging from 1 × 10–6 to 10 × 10–6 Torr. The results revealed that increasing the initial vacuum pressure gradually enhanced the root-mean-square roughness of the films and the formation of columnar structures. At lower vacuum pressures, the carrier mobility and concentration increased due to the enhanced number of oxygen vacancies, resulting in reduced film resistivity. The lowest resistivity of 1.6 × 10–3 Ω·cm was obtained at an initial vacuum pressure of 1 × 10–6 Torr, with an average transmittance of 92.11%. Further decrease in the initial vacuum pressure improved the quality factor of α-IGZO films, with all prepared films showing transmittance values exceeding 90% in the visible range. Overall, vacuum pressure significantly affects the structures and photoelectric properties of α-IGZO films, deserving further exploration for the advanced preparation of α-IGZO films.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15780-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The structures and characteristics of Indium-Gallium-Zinc-Oxide(IGZO) transparent semiconducting films prepared by magnetron sputtering can be influenced by various factors. However, the role of the initial vacuum pressure is seldom investigated, especially on the photoelectric properties of amorphous IGZO films (α-IGZO films). Herein, high-quality, transparent conductive α-IGZO films were deposited by radio frequency (RF) magnetron sputtering at 200 ℃ under various initial vacuum pressures ranging from 1 × 10^–6 to 10 × 10^–6 Torr. The results revealed that increasing the initial vacuum pressure gradually enhanced the root-mean-square roughness of the films and the formation of columnar structures. At lower vacuum pressures, the carrier mobility and concentration increased due to the enhanced number of oxygen vacancies, resulting in reduced film resistivity. The lowest resistivity of 1.6 × 10^–3 Ω·cm was obtained at an initial vacuum pressure of 1 × 10^–6 Torr, with an average transmittance of 92.11%. Further decrease in the initial vacuum pressure improved the quality factor of α-IGZO films, with all prepared films showing transmittance values exceeding 90% in the visible range. Overall, vacuum pressure significantly affects the structures and photoelectric properties of α-IGZO films, deserving further exploration for the advanced preparation of α-IGZO films.

Abstract Image

查看原文本刊更多论文

射频磁控溅射沉积IGZO薄膜光电性能与初始真空压力的关系

磁控溅射法制备的铟镓锌氧化物（IGZO）透明半导体薄膜的结构和性能受到多种因素的影响。然而，对于初始真空压力对非晶IGZO薄膜（α-IGZO薄膜）光电性能的影响研究较少。在1 × 10 - 6 ~ 10 × 10 - 6 Torr的初始真空压力下，采用射频磁控溅射法制备了高质量的透明导电α-IGZO薄膜。结果表明：随着初始真空压力的增大，膜的均方根粗糙度逐渐增大，柱状结构逐渐形成；在较低的真空压力下，由于氧空位数量的增加，载流子迁移率和浓度增加，导致薄膜电阻率降低。在初始真空压力为1 × 10-6 Torr时，获得了1.6 × 10-3 Ω·cm的最低电阻率，平均透过率为92.11%。进一步降低初始真空压力提高了α-IGZO薄膜的品质因子，制备的α-IGZO薄膜在可见光范围内透光率均超过90%。综上所述，真空压力对α-IGZO薄膜的结构和光电性能有显著影响，值得进一步探索α-IGZO薄膜的高级制备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.