A hybrid artificial intelligence framework for predicting electrical and thermal properties of graphene nanoplatelet-enhanced nanoelectronic materials

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Bhaskarrao Yakkala, M. Raja, V. Elumalai, B. Muthuraj, L. Umasankar
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引用次数: 0

Abstract

The rapid advancement of nanoelectronics demands materials with exceptional electrical and mechanical properties to support the development of high-performance, miniaturized devices. Graphene nanoplatelets (GNPs), a promising nanomaterial, have demonstrated significant potential in enhancing materials' electrical and structural characteristics at the nanoscale. This study explores the influence of GNPs on the electrical conductivity (EC) and compressive strength (CS) of nanoelectronic components, leveraging experimental investigations and advanced deep learning (DL) models, including non-autoregressive recurrent neural networks (NARNNs), verifiable convolutional neural networks (VCNNs), and Tsukamoto type-2 fuzzy inference system (TT2FIS). Experimental results revealed that the incorporation of GNPs at concentrations of 0.05% and 0.1% improved EC by 28.7% and 35.2%, respectively, while enhancing CS by 18.4% and 22.6%. These findings highlight the potential of GNP-enhanced materials for use in nanoelectronic devices that demand both high EC and mechanical reliability under thermal conditions. DL models demonstrated outstanding accuracy in predicting the properties of GNP-enhanced materials, with VCNNs achieving the highest performance. For EC predictions, VCNNs achieved a correlation coefficient (R) of 0.989, outperforming NARNNs (R = 0.976) and TT2FIS (R = 0.963). For CS, VCNNs exhibited an R-value of 0.993, compared to NARNNs (R = 0.982) and TT2FIS (R = 0.970). Error analysis further validated the superiority of VCNNs, as the mean square error (MSE) for EC predictions was 15.4% lower than NARNNs and 48.7% lower than TT2FIS. Similarly, for TS predictions, VCNNs achieved an MSE reduction of 12.8% compared to NARNNs and 51.3% compared to TT2FIS. SHapley Additive exPlanations analysis identified GNP concentration as the dominant factor influencing both EC and TS, followed by curing conditions. These results highlight the possible of DL-driven methods, particularly VCNNs, in optimizing GNP-enhanced materials for nanoelectronic applications, offering a fast and cost-effective pathway to design advanced materials for next-generation electronic devices.

用于预测石墨烯纳米板增强纳米电子材料电学和热性能的混合人工智能框架
纳米电子学的快速发展需要具有特殊电气和机械性能的材料来支持高性能、小型化设备的发展。石墨烯纳米片(GNPs)是一种很有前途的纳米材料,在纳米尺度上增强材料的电学和结构特性方面显示出巨大的潜力。本研究利用实验研究和先进的深度学习(DL)模型,包括非自回归递归神经网络(narnn)、可验证卷积神经网络(VCNNs)和Tsukamoto 2型模糊推理系统(TT2FIS),探讨了GNPs对纳米电子元件电导率(EC)和抗压强度(CS)的影响。实验结果表明,在0.05%和0.1%浓度的GNPs掺入下,EC分别提高28.7%和35.2%,CS分别提高18.4%和22.6%。这些发现突出了gnp增强材料在纳米电子器件中应用的潜力,这些器件在热条件下需要高EC和机械可靠性。DL模型在预测gnp增强材料的性能方面表现出出色的准确性,其中vcnn达到了最高的性能。对于EC预测,VCNNs的相关系数(R)为0.989,优于narnn (R = 0.976)和TT2FIS (R = 0.963)。对于CS, VCNNs与NARNNs (R = 0.982)和TT2FIS (R = 0.970)相比,R值为0.993。误差分析进一步验证了vcnn的优越性,vcnn预测EC的均方误差(MSE)比narnn低15.4%,比TT2FIS低48.7%。同样,对于TS预测,vcnn的MSE比narnn降低了12.8%,比TT2FIS降低了51.3%。SHapley加性解释分析发现GNP浓度是影响EC和TS的主要因素,其次是固化条件。这些结果突出了dl驱动方法,特别是VCNNs,在优化纳米电子应用的gnp增强材料方面的可能性,为下一代电子设备设计先进材料提供了快速和经济的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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