{"title":"A 4 A 10 MHz capacitive isolated gate driver with 5 V to 25 V output voltage for WBG FETs","authors":"Yuan Xu, Dejin Zhou, Fuwei Shen, Renxia Ning, Ningye He, Zhenhai Chen, Huang Wei","doi":"10.1007/s10470-025-02443-8","DOIUrl":null,"url":null,"abstract":"<div><p>A gate drive circuit with high speed, low delay and wide output voltage range is designed which can meet the driving requirements of GaN and SiC FETs in this paper. In order to improve the switching frequency and reduce the input/output delay a high speed output drive circuit with a wide gate voltage range and a low delay OOK TX/RX circuit are proposed. A 10 MHz capacitive isolated gate driver IC with output current of 4 A and output gate voltage of 5 V-25 V is realized in 180 nm BCD process. The test results show that the gate driver achieves the rise and fall time of 1.0 ns and 1.5 ns respectively under 5.0 V supply, and the rise and fall time of 2.5 ns and 3.2 ns respectively under 25 V supply with 10 MHz frequency, and the delay time is 22.5 ns and 25 ns respectively for 5.0 V and 25 V supply.</p></div>","PeriodicalId":7827,"journal":{"name":"Analog Integrated Circuits and Signal Processing","volume":"124 3","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Analog Integrated Circuits and Signal Processing","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10470-025-02443-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
A gate drive circuit with high speed, low delay and wide output voltage range is designed which can meet the driving requirements of GaN and SiC FETs in this paper. In order to improve the switching frequency and reduce the input/output delay a high speed output drive circuit with a wide gate voltage range and a low delay OOK TX/RX circuit are proposed. A 10 MHz capacitive isolated gate driver IC with output current of 4 A and output gate voltage of 5 V-25 V is realized in 180 nm BCD process. The test results show that the gate driver achieves the rise and fall time of 1.0 ns and 1.5 ns respectively under 5.0 V supply, and the rise and fall time of 2.5 ns and 3.2 ns respectively under 25 V supply with 10 MHz frequency, and the delay time is 22.5 ns and 25 ns respectively for 5.0 V and 25 V supply.
期刊介绍：
Analog Integrated Circuits and Signal Processing is an archival peer reviewed journal dedicated to the design and application of analog, radio frequency (RF), and mixed signal integrated circuits (ICs) as well as signal processing circuits and systems. It features both new research results and tutorial views and reflects the large volume of cutting-edge research activity in the worldwide field today.
A partial list of topics includes analog and mixed signal interface circuits and systems; analog and RFIC design; data converters; active-RC, switched-capacitor, and continuous-time integrated filters; mixed analog/digital VLSI systems; wireless radio transceivers; clock and data recovery circuits; and high speed optoelectronic circuits and systems.
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