Effect of Stacking Order on the Formation of Cu2CdSnS4 Thin Films Synthesized Using Thermal Evaporation Technique

IF 2 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Materials Engineering and Performance Pub Date : 2025-03-19 DOI:10.1007/s11665-025-10993-1

S. Vishnupriya, Nagabhushan Jnaneshwar Choudhari, D. M. Kavya, B. S. Srujana, Y. Raviprakash

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Abstract

This study investigates the influence of stacking order and sulfurization temperatures on the structural, morphological, optical, and electrical properties of Cu₂CdSnS₄ (CCTS) thin films synthesized via sequential thermal evaporation. Three different stacking sequences (SLG/CdS/Sn/Cu, SLG/Cu/Sn/CdS, and SLG/Cu/CdS/Sn/Cu) were used, followed by sulfurization at 550 and 580 °C. Structural analysis confirmed a tetragonal crystal structure with preferred orientation along the (112) plane, with the N3 series (SLG/Cu/CdS/Sn/Cu) free of SnS impurities. Increasing sulfurization temperature improved crystallinity, increased crystallite size, and reduced lattice strain and dislocation density. Morphological studies showed uniform, crack-free films, with the N3 series exhibiting near-ideal stoichiometry. Optical analysis revealed band gaps in the range of 1.32-1.37 eV, with lower band gap values for higher sulfurization temperatures. Electrical measurements demonstrated that N3-550 had the highest carrier concentration (3.5 × 10¹⁴ cm⁻³) and p-type conductivity, making it the most suitable candidate for photovoltaic applications. The study’s novel approach in stack order optimization and temperature control during sulfurization has resulted in high-quality CCTS thin films with properties that are highly desirable for photovoltaic applications.

Graphical Abstract

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叠层顺序对热蒸发法制备Cu2CdSnS4薄膜的影响

本文研究了堆叠顺序和硫化温度对顺序热蒸发法制备Cu2CdSnS4 （CCTS）薄膜结构、形貌、光学和电学性能的影响。采用SLG/CdS/Sn/Cu、SLG/Cu/Sn/CdS和SLG/Cu/CdS/Sn/Cu三种不同的叠加顺序，分别在550℃和580℃进行硫化。结构分析证实，N3系列（SLG/Cu/CdS/Sn/Cu）不含SnS杂质，具有沿（112）平面择优取向的四方晶体结构。提高硫化温度可改善结晶度，增大晶粒尺寸，降低晶格应变和位错密度。形态学研究显示均匀无裂纹薄膜，N3系列表现出接近理想的化学计量。光学分析显示，带隙在1.32 ~ 1.37 eV之间，高硫化温度下带隙值越小。电学测量表明，N3-550具有最高的载流子浓度（3.5 × 1014 cm−3）和p型电导率，使其成为光伏应用的最佳候选材料。该研究在硫化过程中堆栈顺序优化和温度控制方面的新方法产生了高质量的CCTS薄膜，其性能非常适合光伏应用。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Materials Engineering and Performance 工程技术-材料科学：综合

CiteScore

3.90

自引率

13.00%

发文量

1120

审稿时长

4.9 months

期刊介绍： ASM International''s Journal of Materials Engineering and Performance focuses on solving day-to-day engineering challenges, particularly those involving components for larger systems. The journal presents a clear understanding of relationships between materials selection, processing, applications and performance. The Journal of Materials Engineering covers all aspects of materials selection, design, processing, characterization and evaluation, including how to improve materials properties through processes and process control of casting, forming, heat treating, surface modification and coating, and fabrication. Testing and characterization (including mechanical and physical tests, NDE, metallography, failure analysis, corrosion resistance, chemical analysis, surface characterization, and microanalysis of surfaces, features and fractures), and industrial performance measurement are also covered