Sitong Liu, Lanfeng Li, Shuyi Yang, Yaowen Xu, Naisen Yu, Hongyu Fu
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引用次数: 0
Abstract
In this study, a novel aligned hierarchical Zn(OH)2/GaN heterostructure was fabricated at low temperature through a solution-based approach, offering a promising strategy for anisotropic ultraviolet (UV) photodetection. The structure consists of vertically aligned two-dimensional Zn(OH)2 nanosheets grown epitaxially on a lateral epitaxial overgrowth uncoalesced GaN film. Photoresponse measurements reveal an excellent photoresponse performance with anisotropic photoresponse properties. This anisotropy stems from the directional charge transport pathways facilitated by the aligned Zn(OH)2 nanosheet/uncoalesced GaN structure. These findings provide a new method to design high-performance UV detection sensors based on GaN grown using lateral epitaxy.
期刊介绍：
The Bulletin of Materials Science is a bi-monthly journal being published by the Indian Academy of Sciences in collaboration with the Materials Research Society of India and the Indian National Science Academy. The journal publishes original research articles, review articles and rapid communications in all areas of materials science. The journal also publishes from time to time important Conference Symposia/ Proceedings which are of interest to materials scientists. It has an International Advisory Editorial Board and an Editorial Committee. The Bulletin accords high importance to the quality of articles published and to keep at a minimum the processing time of papers submitted for publication.
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