Strain technology of two-dimensional semiconductors for industrial electronics

IF 7.4 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2025-07-15 DOI:10.1007/s40843-025-3471-2

Li Gao (, ), Yuting Xu (, ), Zhangyi Chen (, ), Maosen Zhang (, ), Xiankun Zhang (, ), Zheng Zhang (, ), Yue Zhang (, )

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Abstract

Two-dimensional (2D) semiconductors, especially transition metal dichalcogenides, are the most competitive channel materials for post-silicon electronics due to their great miniaturization potential and advantages of high performance and low power consumption. The atomically thick structural advantage of 2D semiconductors also makes their strain tolerance far greater than that of silicon, making them an ideal platform for implementing and expanding strain technology in post-silicon electronics. The strain technology of 2D semiconductors can not only improve the mobility and on-current of a single device but also be more conveniently applied to the integration of 3D gate-all-around and complementary field-effect transistors. In recent years, a series of strain technologies with different characteristics have been developed for 2D semiconductors and transistor devices, including lattice mismatch, thermal expansion coefficient mismatch, substrate-induced stress technology, and process-induced stress. At present, it is necessary to sort out the existing technical foundation and propose strain strategies for 2D semiconductors that better suit industrialization and future 3D integration to meet the needs of high-performance post-silicon electronics. This review takes the mature strained silicon technology as a benchmark, systematically reviews the current strain technology of 2D semiconductors and devices, deeply analyzes the limitations of existing technologies, and proposes the development direction of strain technology for 2D semiconductors suitable for industrial applications and future 3D integration.

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工业电子用二维半导体应变技术

二维半导体，特别是过渡金属二硫族化合物，由于其巨大的小型化潜力和高性能、低功耗的优势，是后硅电子领域最具竞争力的通道材料。二维半导体原子厚度的结构优势也使其应变容差远远大于硅，使其成为后硅电子中实施和扩展应变技术的理想平台。二维半导体的应变技术不仅可以提高单个器件的迁移率和导通电流，而且更方便地应用于三维栅极全能和互补场效应晶体管的集成。近年来，针对二维半导体和晶体管器件开发了一系列具有不同特性的应变技术，包括晶格失配、热膨胀系数失配、衬底诱发应力技术和工艺诱发应力技术。目前，有必要梳理现有的技术基础，提出更适合产业化和未来3D集成的二维半导体应变策略，以满足高性能后硅电子的需求。本文以成熟的应变硅技术为基准，系统回顾了目前二维半导体及器件的应变技术，深入分析了现有技术的局限性，提出了适合工业应用和未来3D集成的二维半导体应变技术的发展方向。

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来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.